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EIA1616-8P Datasheet دیتاشیت PDF دانلود

دیتاشیت - Excelics Semiconductor - 16.2-16.4GHz 8W Internally Matched Power FET

شماره قطعه EIA1616-8P
شرح مفصل 16.2-16.4GHz 8W Internally Matched Power FET
تولید کننده Excelics Semiconductor 
آرم Excelics Semiconductor 


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EIA1616-8P شرح
Excelics
EIA1616-8P
Not recommended for new designs. Contact factory. Effective 03/2003
16.2-16.4GHz, 8W Internally Matched Power FET
16.2-16.4GHz BANDWIDTH AND INPUT/OUTPUT
IMPEDANCE MATCHED TO 50 OHM
HIGH PAE( 20% TYPICAL)
+39dBm TYPICAL P1dB OUTPUT POWER
6dB TYPICAL G1dB POWER GAIN
NON-HERMETIC METAL FLANGE PACKAGE
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS
PARAMETERS/TEST CONDITIONS
P1dB
G1dB
PAE
Output Power at 1dB Compression f=16.2-16.4GHz
Vds=8V, Idsq=0.5 Idss
Gain at 1dB Compression
Vds=8V, Idsq=0.5 Idss
f=16.2-16.4GHz
Power Added Efficiency at 1dB compression
f=16.2-16.4GHz Vds=8V, Idsq=0.5 Idss
EIA1616-8P
MIN TYP MAX
38 39
56
20
Id1dB
IP3
Drain Current at 1dB Compression
Output 3rd Order Intercept Point
Vds=8V, Idsq=0.5 Idss
f=16.2-16.4GHz
3520
Idss Saturated Drain Current Vds=3V, Vgs=0V
4400 5760 6800
Gm Transconductance Vds=3V, Vgs=0V
6000
Vp Pinch-off Voltage Vds=3V, Ids=48mA
-1.0 -2.5
BVgd Drain Breakdown Voltage Igd=19.2mA
-13 -15
Rth Thermal Resistance (Au-Sn Eutectic Attach)
2.3
UNIT
dBm
dB
%
mA
dBm
mA
mS
V
V
oC/W
MAXIMUM RATINGS AT 25OC
SYMBOLS
PARAMETERS
ABSOLUTE1
Vds Drain-Source Voltage
12V
Vgs Gate-Source Voltage
-8V
Ids Drain Current
Idss
Igsf Forward Gate Current
720mA
Pin Input Power
38dBm
Tch Channel Temperature
175oC
www.DataSheet4U.comTstg
Pt
Storage Temperature
Total Power Dissipation
-65/175oC
60W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
CONTINUOUS2
8V
-3V
6240mA
120mA
@ 3dB Compression
150oC
-65/150oC
50W
Excelics Semiconductor, Inc., 310 De Guine Drive, Sunnyvale, CA 94085
Phone: (408) 737-1711 Fax: (408) 737-1868 Web Site: www.excelics.com

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