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PDF EIA1414-6 Data sheet ( Hoja de datos )
| Número de pieza | EIA1414-6 | |
| Descripción | 14.00-14.50 GHz 6-Watt Internally Matched Power FET | |
| Fabricantes | Excelics Semiconductor | |
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UPDATED 12/5/2005
EIA1414-6
14.00-14.50 GHz 6-Watt Internally Matched Power FET
FEATURES
• 14.00– 14.50GHz Bandwidth
• Input/Output Impedance Matched to 50 Ohms
• +37.5 dBm Output Power at 1dB Compression
• 8.0 dB Power Gain at 1dB Compression
• 33% Power Added Efficiency
• Hermetic Metal Flange Package
.060 MIN.
.650±.008 .512
GATE
Excelics
EIA1414-6
YM
.060 MIN.
DRAIN
.022
.319
SN
.094
.382
.045
.004 .070 ±.008
.129
ALL DIMENSIONS IN INCHES
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Caution! ESD sensitive device.
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
∆G
PAE
Output Power at 1dB Compression
f = 14.00-14.50GHz
VDS = 8 V, IDSQ ≈ 1600mA
Gain at 1dB Compression
f = 14.00-14.50GHz
VDS = 8 V, IDSQ ≈ 1600mA
Gain Flatness
f = 14.00-14.50GHz
VDS = 8 V, IDSQ ≈ 1600mA
Power Added Efficiency at 1dB Compression
VDS = 8 V, IDSQ ≈ 1600mA
f = 14.00-14.50GHz
Id1dB
Drain Current at 1dB Compression
f = 14.00-14.50GHz
IDSS
Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
VDS = 3 V, IDS = 28mA
RTH Thermal Resistance3
Note: 1) Tested with 100 Ohm gate resistor.
2) S.C.L. = Single Carrier Level.
MIN TYP MAX UNITS
36.5 37.5
dBm
7.0 8.0
dB
±0.6 dB
33 %
1800
2100
mA
2800
3500
mA
-1.0 -2.5
V
4.5 5.0 oC/W
3) Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING1,2
SYMBOLS
PARAMETERS
Vds
Drain-Source Voltage
Vgs
Gate-Source Voltage
Ids Drain Current
Igsf Forward Gate Current
Igsr
Reserve Gate Current
Pin Input Power
Tch Channel Temperature
Tstg
Storage Temperature
www.DataSheePt4tU.com
Total Power Dissipation
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
ABSOLUTE1
12
-5
IDSS
43.2mA
-7.2mA
36.5dBm
175 oC
-65 to +175 oC
30W
CONTINUOUS2
8V
-3V
3.5A
14.4mA
-2.4mA
@ 3dB Compression
175 oC
-65 to +175 oC
30W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 1
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
Revised December 2005
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