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EIB1314-4P Datasheet دیتاشیت PDF دانلود

دیتاشیت - Excelics Semiconductor - 13.75-14.5 GHz 4W Internally Matched Power FET

شماره قطعه EIB1314-4P
شرح مفصل 13.75-14.5 GHz 4W Internally Matched Power FET
تولید کننده Excelics Semiconductor 
آرم Excelics Semiconductor 


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EIB1314-4P شرح
Excelics
EIA/EIB1314-4P
Not recommended for new designs. Contact factory. Effective 03/2003
13.75-14.5GHz, 4W Internally Matched Power FET
13.75-14.5GHz BANDWIDTH AND INPUT/OUTPUT
IMPEDANCE MATCHED TO 50 OHM
EIA FEATURES HIGH PAE( 27% TYPICAL)
EIB FEATURES HIGH IP3(49dBm TYPICAL)
+36.5/+36dBm TYPICAL P1dB OUTPUT POWER FOR
EIA/EIB
8.5/7.5dB TYPICAL G1dB POWER GAIN FOR EIA/EIB
NON-HERMETIC METAL FLANGE PACKAGE
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS
PARAMETERS/TEST CONDITIONS
P1dB
G1dB
PAE
Output Power at 1dB Compression f=13.75-14.5GHz
Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)
Gain at 1dB Compression
f=13.75-14.5GHz
Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)
Power Added Efficiency at 1dB compression
f=13.75-14.5GHz
Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)
Id1dB
IP3
Drain Current at 1dB Compression
Output 3rd Order Intercept Point f=13.75-14.5GHz
Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)
EIA1314-4P
MIN TYP MAX
35.5 36.5
7.5 8.5
27
1760
43
Idss Saturated Drain Current Vds=3V, Vgs=0V
2200 2880 3400
EIB1314-4P
MIN TYP MAX
35 36
6.5 7.5
22
1700
49*
2200 2720 3400
UNIT
dBm
dB
%
mA
dBm
mA
Gm Transconductance Vds=3V, Vgs=0V
3000
1400
mS
Vp Pinch-off Voltage Vds=3V, Ids=24mA
-1.0 -2.5
-2.0 -3.5
V
BVgd Drain Breakdown Voltage Igd=9.6mA
Rth Thermal Resistance (Au-Sn Eutectic Attach)
*Typical –45dBc IM3 at Pout=26dBm/Tone
-13 -15
4.5
-15 V
4.5 oC/W
MAXIMUM RATINGS AT 25OC
SYMBOLS
PARAMETERS
ABSOLUTE1
Vds Drain-Source Voltage
12V
Vgs Gate-Source Voltage
-8V
Ids Drain Current
Idss
Igsf Forward Gate Current
360mA
Pin
www.DataSheet4U.comTch
Tstg
Input Power
Channel Temperature
Storage Temperature
35dBm
175oC
-65/175oC
Pt Total Power Dissipation
30W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
CONTINUOUS2
8V
-3V
3120mA
60mA
@ 3dB Compression
150oC
-65/150oC
25W
Excelics Semiconductor, Inc., 310 De Guine Drive, Sunnyvale, CA 94085
Phone: (408) 737-1711 Fax: (408) 737-1868 Web Site: www.excelics.com

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دیتاشیت توصیه

شماره قطعه شرح مفصل تولید کنندگان
EIB1314-4P Internally Matched Power FET Excelics Semiconductor
Excelics Semiconductor
EIB1314-4P 13.75-14.5 GHz 4W Internally Matched Power FET Excelics Semiconductor
Excelics Semiconductor

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