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Numéro de référence | IPB03N03LAG | ||
Description | OptiMOS3 Power-Transistor | ||
Fabricant | Infineon Technologies AG | ||
Logo | |||
1 Page
OptiMOS®2 Power-Transistor
Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target applications
• N-channel - Logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Superior thermal resistance
• 175 °C operating temperature
• dv /dt rated
• Pb-free lead plating; RoHS compliant
IPB03N03LA G
Product Summary
V DS
R DS(on),max (SMD version)
ID
25 V
2.7 mΩ
80 A
PG-TO263-3-2
Type
IPB03N03LA G
Package
PG-TO263-3-2
Marking
03N03LA
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C2)
T C=100 °C
Pulsed drain current
I D,pulse T C=25 °C3)
Avalanche energy, single pulse
E AS I D=80 A, R GS=25 Ω
Reverse diode dv /dt
dv /dt
I D=80 A, V DS=20 V,
di /dt =200 A/µs,
T j,max=175 °C
Gate source voltage4)
V GS
Power dissipation
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Operating and storage temperature
P tot T C=25 °C
T j, T stg
IEC climatic category; DIN IEC 68-1
1) J-STD20 and JESD22
Rev. 1.6
page 1
Value
80
80
385
960
6
±20
150
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
2006-05-10
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Pages | Pages 9 | ||
Télécharger | [ IPB03N03LAG ] |
No | Description détaillée | Fabricant |
IPB03N03LA | OptiMOS 2 Power-Transistor | Infineon Technologies AG |
IPB03N03LAG | OptiMOS3 Power-Transistor | Infineon Technologies AG |
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