|
|
Numéro de référence | IPB038N12N3G | ||
Description | OptiMOS3 Power-Transistor | ||
Fabricant | Infineon Technologies AG | ||
Logo | |||
1 Page
IPP041N12N3 G
OptiMOSTM3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary
V DS
R DS(on),max (TO-263)
ID
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant, halogen free
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
IPI041N12N3 G
IPB038N12N3 G
120 V
3.8 mΩ
120 A
Type
IPB038N12N3 G IPI041N12N3 G
IPP041N12N3 G
Package
Marking
PG-TO263-3
038N12N
PG-TO262-3
041N12N
PG-TO220-3
041N12N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C2)
T C=100 °C
Pulsed drain current3)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=100 A, R GS=25 Ω
Gate source voltage 4)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
www.DataSheet4U.com
Value
120
120
480
900
±20
300
-55 ... 175
55/175/56
Unit
A
mJ
V
W
°C
Rev. 2.2
page 1
2009-07-16
|
|||
Pages | Pages 11 | ||
Télécharger | [ IPB038N12N3G ] |
No | Description détaillée | Fabricant |
IPB038N12N3G | OptiMOS3 Power-Transistor | Infineon Technologies AG |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |