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IPI041N12N3G fiches techniques PDF

Infineon Technologies AG - OptiMOS3 Power-Transistor

Numéro de référence IPI041N12N3G
Description OptiMOS3 Power-Transistor
Fabricant Infineon Technologies AG 
Logo Infineon Technologies AG 





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IPI041N12N3G fiche technique
IPP041N12N3 G
OptiMOSTM3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary
V DS
R DS(on),max (TO-263)
ID
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant, halogen free
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
IPI041N12N3 G
IPB038N12N3 G
120 V
3.8 m
120 A
Type
IPB038N12N3 G IPI041N12N3 G
IPP041N12N3 G
Package
Marking
PG-TO263-3
038N12N
PG-TO262-3
041N12N
PG-TO220-3
041N12N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C2)
T C=100 °C
Pulsed drain current3)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=100 A, R GS=25
Gate source voltage 4)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
www.DataSheet4U.com
Value
120
120
480
900
±20
300
-55 ... 175
55/175/56
Unit
A
mJ
V
W
°C
Rev. 2.2
page 1
2009-07-16

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