IPB037N06N3G Datasheet PDF - Infineon Technologies AG
| Part Number | IPB037N06N3G | |
| Description | OptiMOS3 Power-Transistor | |
| Manufacturers | Infineon Technologies AG | |
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There is a preview and IPB037N06N3G download ( pdf file ) link at the bottom of this page. Total 11 Pages | ||
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Type
OptiMOS™3 Power-Transistor
Features
• for sync. rectification, drives and dc/dc SMPS
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• N-channel, normal level
• Avalanche rated
• Qualified according to JEDEC1) for target applications
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type
IPB037N06N3 G IPI040N06N3 G
IPB037N06N3 G IPI040N06N3 G
IPP040N06N3 G
Product Summary
V DS
R DS(on),max (SMD)
ID
60 V
3.7 mΩ
90 A
previous engineering
sample codes:
IPP04xN06N
IPI04xN06N
IPB04xN06N
IPP040N06N3 G
Package
Marking
PG-TO263-3
037N06N
PG-TO262-3
040N06N
PG-TO220-3
040N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D T C=25 °C2)
90 A
T C=100 °C
90
Pulsed drain current3)
I D,pulse T C=25 °C
360
Avalanche energy, single pulse
E AS I D=90 A, R GS=25 Ω
165 mJ
Gate source voltage
V GS
±20 V
Power dissipation
P tot T C=25 °C
188 W
Operating and storage temperature T j, T stg
-55 ... 175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
www.DataShe1e)Jt4-SUT.cDo2m0 and JESD22
2) Current is limited by bondwire; with an R thJC=0.8 K/W the chip is able to carry 162 A.
3) See figure 3
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.03
page 1
2009-12-17
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5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
320
10 V
8V
7V
6.5 V
240
6V
160
5.5 V
80
5V
4.5 V
0
0123
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
320
4
IPB037N06N3 G IPI040N06N3 G
IPP040N06N3 G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
15
4.5 V
12
5V
5.5 V
9
6 6V
6.5 V
7V
8V
3 10 V
0
50
50 100
I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
200
150
240
160
www.DataSheet4U.c8o0m
0
0
Rev. 1.03
160
120
175 °C
25 °C
80
40
24
V GS [V]
0
60
page 5
50 100
I D [A]
150
2009-12-17
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IPB037N06N3G electronic component. |
| Information | Total 11 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ IPB037N06N3G.PDF Datasheet ] | |
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