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Numéro de référence | IPB034N03LG | ||
Description | OptiMOS3 Power-Transistor | ||
Fabricant | Infineon Technologies AG | ||
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1 Page
Type
OptiMOS™3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC1) for target applications
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Avalanche rated
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type
IPP034N03L G
IPB034N03L G
Product Summary
V DS
R DS(on),max
ID
IPP034N03L G
IPB034N03L G
30 V
3.4 mΩ
80 A
Package
Marking
PG-TO220-3-1
034N03L
PG-TO263-3
034N03L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
Pulsed drain current2)
Avalanche current, single pulse3)
www.DataSheet4U.com
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
1) J-STD20 and JESD22
Rev. 2.0
I D,pulse
I AS
E AS
dv /dt
V GS
V GS=4.5 V, T C=25 °C
V GS=4.5 V,
T C=100 °C
T C=25 °C
T C=25 °C
I D=80 A, R GS=25 Ω
I D=80 A, V DS=24 V,
di /dt =200 A/µs,
T j,max=175 °C
page 1
Value
80
80
80
77
400
80
70
6
±20
Unit
A
mJ
kV/µs
V
2010-02-19
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Pages | Pages 10 | ||
Télécharger | [ IPB034N03LG ] |
No | Description détaillée | Fabricant |
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