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IPB031NE7N3G fiches techniques PDF

Infineon Technologies AG - OptiMOS3 Power-Transistor

Numéro de référence IPB031NE7N3G
Description OptiMOS3 Power-Transistor
Fabricant Infineon Technologies AG 
Logo Infineon Technologies AG 





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IPB031NE7N3G fiche technique
OptiMOSTM3 Power-Transistor
Features
• Optimized technology for synchronous rectification
• Ideal for high frequency switching and DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance RDS(on)
Product Summary
V DS
R DS(on),max
ID
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Halogen-free according to IEC61249-2-21
Type
IPB031NE7N3 G
IPB031NE7N3 G
75 V
3.1 mΩ
100 A
Package
Marking
PG-TO263-3
031NE7N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C2)
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse3) E AS I D=74 A, R GS=25 Ω
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature
www.DataSheet4U.com
T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
Rev. 2.2
page 1
Value
100
100
400
640
±20
214
-55 ... 175
55/175/56
Unit
A
mJ
V
W
°C
2009-12-16

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