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Número de pieza | NTS4409N | |
Descripción | Small Signal MOSFET | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
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No Preview Available ! NTS4409N
Small Signal MOSFET
25 V, 0.75 A, Single, N−Channel,
ESD Protection, SC−70/SOT−323
Features
• Advance Planar Technology for Fast Switching, Low RDS(on)
• Higher Efficiency Extending Battery Life
• This is a Pb−Free Device
Applications
• Boost and Buck Converter
• Load Switch
• Battery Protection
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Drain Current
Continuous Drain Current
(Note 1)
Power Dissipation (Note 1)
t < 5 s TA = 25°C
Steady TA = 25°C
State TA = 75°C
Steady State
Power Dissipation (Note 1)
tv5s
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode) (Note 1)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
VDSS
VGS
ID
ID
PD
PD
IDM
TJ,
TSTG
IS
TL
25
"8.0
0.75
0.7
0.6
0.28
0.33
3.0
−55 to
+150
0.3
260
V
V
A
A
W
W
A
°C
A
°C
ESD Rating − Machine Model
250 V
THERMAL RESISTANCE RATINGS
Rating
Symbol Max Unit
Junction−to−Ambient – Steady State (Note 1)
RqJA
450 °C/W
Junction−to−Ambient − t v 5 s (Note 1)
RqJA
375
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
www.D1a.taS(SCuhurefaeactr4eeaUm=.coo1u.mn1t2e7d
on FR4
in sq [1
board using 1 in sq pad
oz] including traces).
size
http://onsemi.com
V(BR)DSS
25 V
RDS(on) Typ
249 mW @ 4.5 V
299 mW @ 2.7 V
ID Max
0.75 A
SC−70 (3−Leads)
Gate 1
3 Drain
Source 2
Top View
3
1
2
SC−70/SOT−323
CASE 419
STYLE 8
MARKING DIAGRAM &
PIN ASSIGNMENT
3
Drain
T4 WG
G
1
Gate
2
Source
T4 = Device Code
W = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTS4409NT1G SOT−323 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 2
1
Publication Order Number:
NTS4409N/D
1 page NTS4409N
PACKAGE DIMENSIONS
D
e1
3
HE
1
E
2
b
e
0.05 (0.002)
A1
A
SC−70 (SOT−323)
CASE 419−04
ISSUE M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
MILLIMETERS
INCHES
DIM MIN NOM MAX
MIN NOM MAX
A 0.80
0.90
1.00
0.032 0.035 0.040
A1 0.00
0.05
0.10
0.000 0.002 0.004
A2 0.7 REF
0.028 REF
b 0.30
0.35
0.40
0.012 0.014 0.016
c 0.10 0.18 0.25 0.004 0.007 0.010
D 1.80
2.10
2.20
0.071 0.083 0.087
E 1.15
1.24
1.35
0.045 0.049 0.053
e 1.20 1.30 1.40 0.047 0.051 0.055
e1 0.65 BSC
0.026 BSC
L 0.425 REF
0.017 REF
A2 c HE 2.00 2.10 2.40 0.079 0.083 0.095
STYLE 8:
L PIN 1. GATE
2. SOURCE
3. DRAIN
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.DataSheet4U.com
http://onsemi.com
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet NTS4409N.PDF ] |
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