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PDF NTZD3155C Data sheet ( Hoja de datos )
| Número de pieza | NTZD3155C | |
| Descripción | Small Signal MOSFET | |
| Fabricantes | ON Semiconductor | |
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NTZD3155C
Small Signal MOSFET
Complementary 20 V, 540 mA / -430 mA,
with ESD protection, SOT-563 package.
Features
•ăLeading Trench Technology for Low RDS(on) Performance
•ăHigh Efficiency System Performance
•ăLow Threshold Voltage
•ăESD Protected Gate
•ăSmall Footprint 1.6 x 1.6 mm
•ăThese are Pb-Free Devices
Applications
•ăDC-DC Conversion Circuits
•ăLoad/Power Switching with Level Shift
•ăSingle or Dual Cell Li-Ion Battery Operated Systems
•ăHigh Speed Circuits
•ăCell Phones, MP3s, Digital Cameras, and PDAs
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Parameter
Symbol Value Unit
Drain-to-Source Voltage
Gate-to-Source Voltage
N-Channel
Continuous Drain
Current (Note 1)
Steady
State
tv5s
P-Channel
Continuous Drain
Current (Note 1)
Steady
State
tv5s
Power Dissipation
(Note 1)
Steady
State
tv5s
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
TA = 85°C
TA = 25°C
VDSS
VGS
ID
TA = 25°C PD
20
±6
540
390
570
-430
-310
-455
250
280
V
V
mA
mW
Pulsed Drain Current N-Channel
P-Channel tp = 10 ms
IDM
1500
-750
mA
Operating Junction and Storage Temperature
TJ,
TSTG
-55 to
150
°C
Source Current (Body Diode)
IS 350 mA
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL 260 °C
www.DSattraeSshseeest4eUxc.eceodming Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface-mounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq [1 oz] including traces).
http://onsemi.com
V(BR)DSS
N-Channel
20 V
P-Channel
-20 V
RDS(on) Typ
0.4 W @ 4.5 V
0.5 W @ 2.5 V
0.7 W @ 1.8 V
0.5 W @ -4.5 V
0.6 W @ -2.5 V
1.0 W @ -1.8 V
ID Max
(Note 1)
540 mA
-430 mA
PINOUT: SOT-563
S1 1
6 D1
G1 2
5 G2
D2 3
4 S2
Top View
6
1
SOT-563-6
CASE 463A
MARKING
DIAGRAM
TW MĂG
G
TW = Specific Device Code
M = Date Code
G = Pb-Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTZD3155CT1G SOT-563 4000 / Tape & Reel
(Pb-Free)
NTZD3155CT2G SOT-563 4000 / Tape & Reel
(Pb-Free)
NTZD3155CT5G SOT-563 8000 / Tape & Reel
(Pb-Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©Ă Semiconductor Components Industries, LLC, 2007
May, 2007 - Rev. 2
1
Publication Order Number:
NTZD3155C/D
1 page  
NTZD3155C
N-CHANNEL TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
200
TJ = 25°C
150
100 VGS = 0 V
CISS
50 VDS = 0 V
COSS
0
0 5 10 15
VDS
DRAIN-T O-SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
20
5
4 VDS
3
QT
20
VGS
16
12
2
QGS
QGD
8
1
ID = 0.54 A
4
TJ = 25°C
00
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate-to-Source and
Drain-to-Source Voltage versus Total Charge
100
VDS = 10 V
ID = 0.2 A
VGS = 4.5 V
10
td(OFF)
tf
tr
td(ON)
0.6
VGS = 0 V
0.5 TJ = 25°C
0.4
0.3
0.2
0.1
1
1 10 100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
0
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage versus
Current
1
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http://onsemi.com
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