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ON Semiconductor - Main Switch Power MOSFET and Single Charging BJT

Numéro de référence NUS5531MT
Description Main Switch Power MOSFET and Single Charging BJT
Fabricant ON Semiconductor 
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NUS5531MT fiche technique
NUS5531MT
Main Switch Power
MOSFET and Single
Charging BJT
12 V, 6.2 A, Single PChannel FET with
Single PNP low Vce(sat) Transistor,
3x3 mm WDFN Package
This device integrates one high performance power MOSFET and
one low Vce(sat) transistor, greatly reducing the layout space and
optimizing charging performance in batterypowered portable
electronics.
Features
High Performance Power MOSFET
Single Low Vce(sat) Transistor as Charging Power Mux
3.0x3.0x0.8 mm WDFN Package
Independent Pinout Provides Circuit Flexibility
Low Profile (<0.8 mm) for Easy Fit in Thin Environments
This is a PbFree Device
Applications
Main Switch and Battery Charging Mux for Portable Electronics
Optimized for Commercial PMUs from Top Suppliers (See Figure 2)
Emitter 1
Emitter 2
Collector 3
Source 4
8 Base
7 N/C
6 Gate
5 Drain
http://onsemi.com
MOSFET
V(BR)DSS
RDS(on) TYP
ID MAX
12 V
32 mW @ 4.5 V
44 mW @ 2.5 V
6.2 A
Low Vce(sat) PNP (Wall/USB)
VCEO MAX
VEBO MAX
IC MAX
20 V
7.0 V
2.0 A
8
1
WDFN8
CASE 506BC
MARKING DIAGRAM
1 5531
AYWW G
G
5531 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
Base 8
NC 7
Collector
10
GATE 6
Drain 5
Drain
9
1 Emitter
2 Emitter
3 Collector
4 Source
(Bottom View)
(Top View)
Figure 1. Simple Schematic
www.DataSheet4U.com
ORDERING INFORMATION
Device
Package
Shipping
NUS5531MTR2G WDFN8 3000/Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2008
July, 2008 Rev. 1
Publication Order Number:
NUS5531MT/D

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