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Número de pieza | NTD6415ANL | |
Descripción | N-Channel Power MOSFET 100 V / 23 A / 56 mome Logic Level | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de NTD6415ANL (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! NTD6415ANL
N- Channel Power MOSFET
100 V, 23 A, 56 mΩ, Logic
Level
Features
Low RDS(on)
100% Avalanche Tested
AEC--Q101 Qualified
These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Parameter
Symbol Value
Drain--to--Source Voltage
Gate--to--Source Voltage -- Continuous
Continuous Drain
Current
Power Dissipation
Steady
State
Steady
State
TC = 25C
TC = 100C
TC = 25C
VDSS
VGS
ID
PD
100
±20
23
16
83
Pulsed Drain Current
tp = 10 ms
Operating and Storage Temperature Range
IDM
TJ, Tstg
80
--55 to
+175
Source Current (Body Diode)
Single Pulse Drain--to--Source Avalanche
Energy (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) =
23 A, L = 0.3 mH, RG = 25 Ω)
Lead Temperature for Soldering
Purposes, 1/8 from Case for 10 Seconds
IS
EAS
TL
23
79
260
Unit
V
V
A
W
A
C
A
mJ
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction--to--Case (Drain) -- Steady State
RθJC
1.8 C/W
Junction--to--Ambient -- Steady State (Note 1)
RθJA
39
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
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V(BR)DSS
100 V
RDS(on) MAX
56 mΩ @ 4.5 V
52 mΩ @ 10 V
D
ID MAX
23 A
G
S
4
12
3
DPAK
CASE 369AA
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4 Drain
1
Gate
2
Drain
3
Source
6415ANL = Device Code
Y = Year
WW = Work Week
G = Pb--Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2010
March, 2010 -- Rev. 0
1
Publication Order Number:
NTD6415ANL/D
1 page 10
1 Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01 SINGLE PULSE
0.001
0.000001
0.00001
NTD6415ANL
0.0001
0.001
0.01
t, PULSE TIME (s)
Figure 13. Thermal Response
0.1
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1 10
http://onsemi.com
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet NTD6415ANL.PDF ] |
Número de pieza | Descripción | Fabricantes |
NTD6415AN | N-Channel Power MOSFET / Transistor | ON Semiconductor |
NTD6415ANL | N-Channel Power MOSFET 100 V / 23 A / 56 mome Logic Level | ON Semiconductor |
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