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NTGD4167C fiches techniques PDF

ON Semiconductor - Power MOSFET ( Transistor )

Numéro de référence NTGD4167C
Description Power MOSFET ( Transistor )
Fabricant ON Semiconductor 
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NTGD4167C fiche technique
NTGD4167C
Power MOSFET
Complementary, 30 V, +2.9/2.2 A,
TSOP6 Dual
Features
Complementary NChannel and PChannel MOSFET
Small Size (3 x 3 mm) Dual TSOP6 Package
Leading Edge Trench Technology for Low On Resistance
Reduced Gate Charge to Improve Switching Response
Independently Connected Devices to Provide Design Flexibility
This is a PbFree Device
Applications
DCDC Conversion Circuits
Load/Power Switching with Level Shift
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
DraintoSource Voltage
GatetoSource Voltage (NCh & PCh)
NChannel
Continuous Drain
Current (Note 1)
PChannel
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
t5s
Steady
State
t5s
Steady State
t5s
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
VDSS
VGS
ID
ID
PD
30
±12
2.6
1.9
2.9
1.9
1.4
2.2
0.9
1.1
Pulsed Drain
Current
NCh
PCh
tp = 10 ms
IDM
8.6
6.3
Operating Junction and Storage Temperature TJ, TSTG 55 to
150
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
IS ±0.9
TL 260
Unit
V
V
A
A
W
A
°C
A
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Value Unit
JunctiontoAmbient – Steady State (Note 1) RqJA
140 °C/W
JunctiontoAmbient – t 5 s (Note 1)
RqJA
110 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
www.DataSheet4U.com
http://onsemi.com
V(BR)DSS
NCh
30 V
PCh
30 V
RDS(on) MAX
90 mW @ 4.5 V
125 mW @ 2.5 V
170 mW @ 4.5 V
300 mW @ 2.5 V
ID MAX (Note 1)
2.6 A
2.2 A
1.9 A
1.0 A
D1 D2
G1 G2
S1 S2
NCHANNEL MOSFET PCHANNEL MOSFET
1
TSOP6
CASE 318G
STYLE 13
MARKING
DIAGRAM
TA MG
G
1
TA = Specific Device Code
M = Date Code
G = PbFree Package
(Note: Microdot may be in either location)
PIN CONNECTION
G1 1
S2 2
G2 3
6 D1
5 S1
4 D2
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 9 of this data sheet.
© Semiconductor Components Industries, LLC, 2008
December, 2008 Rev. 1
1
Publication Order Number:
NTGD4167C/D

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