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Número de pieza | NTGD4169F | |
Descripción | Power MOSFET and Schottky Diode | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
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Power MOSFET and
Schottky Diode
30 V, 2.9 A, N−Channel with Schottky
Barrier Diode, TSOP−6
Features
• Fast Switching
• Low Gate Change
• Low RDS(on)
• Low VF Schottky Diode
• Independently Connected Devices to Provide Design Flexibility
• This is a Pb−Free Device
Applications
• DC−DC Converters
• Portable Devices like PDA’s, Cellular Phones, and Hard Drives
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage
N−Channel
Continuous Drain
Current (Note 1)
Steady State
t≤ 5 s
TA = 25°C
TA = 85°C
TA = 25°C
VDSS
VGS
ID
30
±12
2.6
1.9
2.9
Power Dissipation Steady State TA = 25°C
(Note 1)
t≤ 5 s
PD
0.9
1.1
Unit
V
V
A
W
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
IDM
TJ, TSTG
8.6
−25 to
150
A
°C
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
IS 0.9 A
TL 260 °C
SCHOTTKY MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Peak Repetitive Reverse Voltage
VRRM 30 V
DC Blocking Voltage
VR 30 V
Average Rectified Forward Current
IF 1 A
THERMAL RESISTANCE RATINGS
Parameter
Junction−to−Ambient – Steady State (Note
1)
Symbol
RqJA
Value
140
Unit
°C/W
Junction−to−Ambient – t ≤ 5 s (Note 1)
RqJA
110 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
© Semiconductor Components Industries, LLC, 2008
May, 2008 − Rev. 1
1
www.DataSheet4U.com
http://onsemi.com
N−CHANNEL MOSFET
V(BR)DSS
RDS(on) Max
ID Max
30 V
90 mW @ 4.5 V
125 mW @ 2.5 V
2.6 A
2.2 A
VR Max
30 V
SCHOTTKY DIODE
VF Max
0.53 V
IF Max
1.0 A
DA
G
S
N−Channel MOSFET
K
Schottky Diode
MARKING
DIAGRAM
1
TSOP−6
CASE 318G
STYLE 15
TD MG
G
1
TD = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTION
A1
S2
6K
5 N/C
G3
4D
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
Publication Order Number:
NTGD4169F/D
1 page NTGD4169F
5
4
3
2 QGS
QT
VDS
QGD
VGS
16
14
12
10
8
6
1
ID = 2.0 A
TJ = 25°C
VDS = 15 V
4
2
00
01234
QG, TOTAL GATE CHARGE (nC)
Figure 7. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
1.2
1.1 ID = 250 mA
1.0
0.9
0.8
0.7
0.6
0.5
0.4
−50
−25 0
25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Threshold Voltage
150
100
VGS = −10 V
Single Pulse
10 TA = 25°C
1
10
1.0 TJ = 150°C
TJ = 25°C www.DataSheet4U.com
0.1
0.3
40
0.4 0.5 0.6 0.7 0.8 0.9 1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 8. Diode Forward Voltage versus
Current
1.1
30
20
10
0
0.001 0.01
0.1
1
10 100 1000
SINGLE PULSE TIME (s)
Figure 10. Single Pulse Maximum Power
Dissipation
100 ms
1 ms
0.1
0.01
0.1
RDS(on) Limit
Thermal Limit
Package Limit
1
10 ms
dc
10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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NTGD4169F | Power MOSFET and Schottky Diode | ON Semiconductor |
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