|
|
Numéro de référence | NTHS4501N | ||
Description | Power MOSFET ( Transistor ) | ||
Fabricant | ON Semiconductor | ||
Logo | |||
1 Page
NTHS4501N
Power MOSFET
30 V, 6.7 A, Single N−Channel,
ChipFETt Package
Features
• Planar Technology Device Offers Low RDS(on) and Fast Switching Speed
in a ChipFET Package
• Leadless ChipFET Package has 40% Smaller Footprint than TSOP−6.
Ideal Device for Applications Where Board Space is at a Premium.
• ChipFET Package Exhibits Excellent Thermal Capabilities Where
Heat Transfer is Required.
• Pb−Free Package is Available
Applications
• Buck and Boost Converters
• Optimized for Battery and Load Management Applications in
Portable Equipment such as Notebook Computers, MP3 Players,
Cell Phones, Digital Cameras, Personal Digital Assistants and Other
Portable Applications
• Charge Control in Battery Chargers
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Steady TA = 25°C
State
TA = 85°C
t ≤ 5 s TA = 25°C
Power Dissipation
(Note 1)
Steady TA = 25°C
State
TA = 85°C
t ≤ 5 s TA = 25°C
Pulsed Drain Current tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
ID
PD
IDM
TJ,
TSTG
30
±20
4.9
3.5
6.7
1.3
0.7
2.5
20
−55 to
150
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IS 1.1
TL 260
Unit
V
V
A
W
A
°C
A
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Ambient – Steady State (Note 1) RqJA
95 °C/W
Junction−to−Foot (Drain) Steady State (Note 1)
RqJF
20
Junction−to−Ambient – t ≤ 5 s (Note 1)
RqJA
50
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq. pad size
(Cu area = 1.127 in sq [1 oz] including traces).
www.DataSheet4U.com
http://onsemi.com
V(BR)DSS
30 V
RDS(on) Typ
30 mW @ 10 V
40 mW @ 4.5 V
D
ID Max
6.7 A
G
S
N−Channel MOSFET
MARKING DIAGRAM
8 AND PIN ASSIGNMENT
1
ChipFET
CASE 1206A
STYLE 1
D DDS
D2 M
G
1
D DDG
D2 = Specific Device Code
M = Month Code
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
NTHS4501NT1
NTHS4501NT1G
ChipFET
ChipFET
(Pb−Free)
3000/Tape & Reel
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2007
February, 2007 − Rev. 4
1
Publication Order Number:
NTHS4501N/D
|
|||
Pages | Pages 6 | ||
Télécharger | [ NTHS4501N ] |
No | Description détaillée | Fabricant |
NTHS4501N | Power MOSFET ( Transistor ) | ON Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |