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PDF NTLJD2104P Data sheet ( Hoja de datos )

Número de pieza NTLJD2104P
Descripción Power MOSFET ( Transistor )
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NTLJD2104P
Power MOSFET
12 V, 4.3 A, mCOOLE Dual PChannel,
2x2 mm, WDFN package
Features
WDFN 2x2 mm Package with Exposed Drain Pads for Excellent
Thermal Conduction
Lowest RDS(on) in 2x2 mm Package
Footprint Same as SC88 Package
Low Profile (<0.8 mm) for Easy Fit in Thin Environments
Bidirectional Current Flow with Common Source Configuration
These are PbFree Devices
Applications
Optimized for Battery and Load Management Applications in
Portable Equipment
Li Ion Battery Charging and Protection Circuits
Dual High Side Load Switch
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
Current (Note 1)
Steady
State
Power Dissipation
(Note 1)
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
t5s
Steady
State
t5s
Steady
State
TJ = 25°C
TJ = 85°C
TJ = 25°C
TJ = 25°C
TJ = 25°C
TJ = 85°C
TJ = 25°C
VDSS
VGS
ID
PD
ID
PD
12
±8.0
3.5
2.5
4.3
1.5
2.3
2.4
1.7
0.7
V
V
A
W
A
W
Pulsed Drain Current
tp = 10 ms
IDM
Operating Junction and Storage Temperature TJ, TSTG
20
55 to
150
A
°C
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
IS 1.5 A
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size
of 30 mm2, 2 oz. Cu.
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V(BR)DSS
12 V
RDS(on) TYP
60 mW @ 4.5 V
85 mW @ 2.5 V
110 mW @ 1.8 V
140 mW @ 1.5 V
190 mW @ 1.3 V
230 mW @ 1.2 V
ID MAX
3.0 A
3.0 A
0.7 A
0.5 A
0.2 A
0.2 A
S1
G1
S2
G2
D1 D2
PCHANNEL MOSFET PCHANNEL MOSFET
D2 D1
MARKING
DIAGRAM
Pin 1
WDFN6
CASE 506AN
1
2
JCMG
6
5
3G 4
JC = Specific Device Code
M = Date Code
G = PbFree Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
S1 1
D1
6 D1
G1 2
D2 3
D2
5 G2
4 S2
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
© Semiconductor Components Industries, LLC, 2008
October, 2008 Rev. 2
1
Publication Order Number:
NTLJD2104P/D

1 page




NTLJD2104P pdf
NTLJD2104P
TYPICAL CHARACTERISTICS
800
700
Ciss
600
VGS = 0 V
TJ = 25°C
f = 1 MHz
500
400
Coss
300
200
100 Crss
0
0 2 4 6 8 10
VDS, DRAINTOSOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
12
1000
100
VGS = 4.5 V
VDD = 6 V
ID = 3 A
10
td(off)
tf
tr
td(on)
5 QT
8
46
3 VDS
VGS
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4
2 QGS
1
QGD
VDS = 6 V
ID = 3 A
TJ = 25°C
2
00
012 345 6
QG, TOTAL GATE CHARGE (nC)
Figure 8. GatetoSource and
DraintoSource Voltage vs. Total Charge
100
TJ = 150°C
10
TJ = 25°C
1
1
1 10 100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
0.8
0.7 ID = 250 mA
0.6
0.5
0.4
0.3
0.2
50 25 0 25 50 75 100 125 150
TJ, TEMPERATURE (°C)
Figure 11. Threshold Voltage
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, SOURCETODRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
30
25 *See Note 2 on Page 1
20
15
10
5
0
0.001 0.01
0.1
1
10 100 1000
SINGLE PULSE TIME (s)
Figure 12. Single Pulse Maximum Power
Dissipation
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