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PDF NTMD4884NF Data sheet ( Hoja de datos )

Número de pieza NTMD4884NF
Descripción Power MOSFET and Schottky Diode
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NTMD4884NF
Power MOSFET and
Schottky Diode
30 V, 5.7 A, Single N-Channel with 30 V,
2.8 A, Schottky Barrier Diode
Features
ăFETKYt Surface Mount Package Saves Board Space
ăIndependent Pin-Out for MOSFET and Schottky Allowing for
Design Flexibility
ăLow RDS(on) MOSFET and Low VF Schottky to Minimize
Conduction Losses
ăOptimized Gate Charge to Minimize Switching Losses
ăThis is a Pb-Free Device
Applications
ăDisk Drives
ăDC-DC Converters
ăPrinters
MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Rating
Symbol Value Unit
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain
Current RqJA (Note 1)
Power Dissipation
RqJA (Note 1)
Continuous Drain
Current RqJA (Note 2)
Power Dissipation
RqJA (Note 2)
Continuous Drain
Current RqJA t < 10 s
(Note 1)
Steady
State
TA = 25°C
TA = 70°C
TA = 25°C
TA = 25°C
TA = 70°C
TA = 25°C
TA = 25°C
TA = 70°C
VDSS
VGS
ID
PD
ID
PD
ID
30
±20
4.7
3.8
1.6
3.3
2.6
0.77
5.7
4.5
V
V
A
W
A
W
A
Power Dissipation
RqJA t < 10 s (Note 1)
TA = 25°C
Pulsed Drain Current
TA = 25°C,
tp = 10 ms
Operating Junction and Storage Temperature
PD
IDM
TJ, TSTG
2.3
19
-55 to
+150
W
A
°C
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
IS 1.3 A
TL 260 °C
SCHOTTKY MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Peak Repetitive Reverse Voltage
VRRM 30 V
DC Blocking Voltage
VR 30 V
Average Rectified Forward
Current, (Note 1)
Steady IF 2.8 A
State
t < 10 s
4.1
©Ă Semiconductor Components Industries, LLC, 2008
March, 2008 - Rev. 0
1
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http://onsemi.com
N-CHANNEL MOSFET
V(BR)DSS
30 V
RDS(on) Max
48 mW @ 10 V
70 mW @ 4.5 V
ID Max
5.7 A
VR Max
30 V
SCHOTTKY DIODE
VF Max
0.5 V
IF Max
2.8 A
SA
G
D
N-Channel MOSFET
C
Schottky Diode
MARKING DIAGRAM
& PIN ASSIGNMENT
8
1
SOIC-8
CASE 751
STYLE 18
C CDD
8
4884NF
AYWW
G
1
A ASG
4884NF = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb-Free Package
ORDERING INFORMATION
Device
Package
Shipping
NTMD4884NFR2G SOIC-8 2500/Tape & Reel
(Pb-Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTMD4884NF/D

1 page




NTMD4884NF pdf
1000
100 0.5
0.2
0.1
10 0.05
0.02
0.01
1
NTMD4884NF
TYPICAL CHARACTERISTICS
0.1
Single Pulse
0.01
0.0000001 0.000001 0.00001
0.0001
0.001
0.01
0.1
1
PULSE TIME (sec)
Figure 11. Thermal Response - RqJA at Steady State (min pad)
10
100
0.5
0.2
10 0.1
0.05
0.02
1
0.01
0.1
Single Pulse
0.01
0.001
0.0000001 0.000001 0.00001 0.0001
0.001
0.01
0.1
1
10
PULSE TIME (sec)
Figure 12. Thermal Response - RqJA at Steady State (1 inch sq pad)
100 100
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100 1000
100 1000
10
TJ = 125°C
1
TJ = 85°C
TJ = 25°C
0.1 TJ = -55°C
0.1 0.3 0.5 0.7 0.9 1.1 1.3
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 13. Typical Forward Voltage
10
TJ = 125°C
1
TJ = 85°C
TJ = 25°C
0.1
0.1 0.3 0.5 0.7 0.9 1.1 1.3
VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 14. Maximum Forward Voltage
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