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PDF NTMFS4120N Data sheet ( Hoja de datos )
| Número de pieza | NTMFS4120N | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTMFS4120N
Power MOSFET
30 V, 31 A, Single N-Channel,
SO-8 Flat Lead
Features
•ăLow RDS(on)
•ăOptimized Gate Charge
•ăLow Inductance SO-8 Package
•ăThese are Pb-Free Devices
Applications
•ăNotebooks, Graphics Cards
•ăDC-DC Converters
•ăSynchronous Rectification
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current
(Note 1 )
Power Dissipation (Note 1)
Steady
State
t v10 s
Steady
State
t v10 s
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
VDSS
VGS
ID
PD
30
$20
18
13
31
2.2
6.9
Continuous Drain Current
(Note 2)
Power Dissipation (Note 2)
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
ID
PD
IDM
TJ, Tstg
11
8.0
0.9
94
-55 to
150
Unit
V
V
A
W
A
W
A
°C
Source Current (Body Diode)
IS 7.0 A
Single Pulse Drain-to-Source Avalanche Energy EAS 450 mJ
(VDD = 30 V, VGS = 10 V, IPK = 30 A,
L = 1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 260 °C
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction-to-Case - Steady State
RqJC
1.7 °C/W
Junction-to-Ambient - Steady State (Note 1)
RqJA
55.8
Junction-to-Ambient - t v10 s (Note 1)
RqJA
18
Junction-to-Ambient - Steady State (Note 2)
RqJA 139.1
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface mounted on FR4 board using the minimum recommended pad size
(Cu area = 1.0 in sq).
www.DataSheet4U.com
http://onsemi.com
V(BR)DSS
30 V
RDS(on) Typ
3.5 mW @ 10 V
4.2 mW @ 4.5 V
ID Max
(Note 1)
31 A
D
G
S
1
SO-8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
S 4120N
S AYWWG
GG
D
D
D
4120N = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb-Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTMFS4120NT1G SO-8 FL 1500 Tape & Reel
(Pb-Free)
NTMFS4120NT3G SO-8 FL 5000 Tape & Reel
(Pb-Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©Ă Semiconductor Components Industries, LLC, 2007
July, 2007 - Rev. 3
1
Publication Order Number:
NTMFS4120N/D
1 page  
1
D = 0.5
0.2
0.1 0.1
0.05
0.02
0.01 0.01
0.001
SINGLE PULSE
1E-04
1E-03
NTMFS4120N
1E-02
1E-01
1E+00
t, TIME (seconds)
Figure 13. Thermal Response
1E+01
www.DataSheet4U.com
1E+02
1E+03
http://onsemi.com
5
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NTMFS4120N.PDF ] | |
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