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PDF NTMFS4744N Data sheet ( Hoja de datos )
| Número de pieza | NTMFS4744N | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTMFS4744N
Power MOSFET
30 V, 53 A, Single N-Channel, SO-8 FL
Features
•ăLow RDS(on) to Minimize Conduction Losses
•ăLow Capacitance to Minimize Driver Losses
•ăOptimized Gate Charge to Minimize Switching Losses
•ăThese are Pb-Free Devices
Applications
•ăCPU Power Delivery
•ăDC-DC Converters
•ăLow Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain
Current RqJA
(Note 1)
TA = 25°C
TA = 85°C
Power Dissipation
RqJA (Note 1)
Continuous Drain
Current RqJA
(Note 2)
Power Dissipation
RqJA (Note 2)
Continuous Drain
Current RqJC
(Note 1)
Steady
State
TA = 25°C
TA = 25°C
TA = 85°C
TA = 25°C
TC = 25°C
TC = 85°C
Power Dissipation
RqJC (Note 1)
Pulsed Drain
Current
tp=10ms
TC = 25°C
TA = 25°C
Operating Junction and Storage Temperature
VDSS
VGS
ID
PD
ID
PD
ID
PD
IDM
TJ, TSTG
30
20
11
8.0
2.2
7.0
5.0
0.88
53
38
47.2
106
-55 to
+150
V
V
A
W
A
W
A
W
A
°C
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain-to-Source Avalanche
Energy (VDD = 50 V, VGS = 10 V,
IL = 24 Apk, L = 1.0 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IS
dV/dt
EAS
TL
46 A
6.0 V/ns
286 mJ
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
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http://onsemi.com
V(BR)DSS
30 V
RDS(on) MAX
10 mW @ 10 V
14 mW @ 4.5 V
ID MAX
53 A
N-Channel
D
G
S
1
SO-8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
S 4744N
S AYWWG
GG
D
D
D
4744N = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb-Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTMFS4744NT1G SO-8 FL 1500 Tape & Reel
(Pb-Free)
NTMFS4744NT3G SO-8 FL 5000 Tape & Reel
(Pb-Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©Ă Semiconductor Components Industries, LLC, 2007
July, 2007 - Rev. 4
1
Publication Order Number:
NTMFS4744N/D
1 page  
NTMFS4744N
TYPICAL PERFORMANCE CURVES
2000
1600
1200
800
Ciss
Coss
TJ = 25°C
VGS = 0 V
5
4 QGS
3
2
QT
QGD
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400
0
0
Crss
4
8
12 16 20
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
1000
tr
100 tf
td(off)
10 td(on)
VDS = 15 V
ID = 30 A
VGS = 4.5 V
1
1 10 100
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
1000
100
VGS = 2.0 V
SINGLE PULSE
TC = 25°C
10
1
10 ms
100 ms
1 ms
10 ms
0.1
0.01
0.1
RDS(on) LIMIT
Thermal Limit
Package Limit
dc
1 10
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
100
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
1
0
04
ID = 30 A
TJ = 25°C
8 12
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate-To-Source and Drain-To-Source
Voltage vs. Total Charge
10
VGS = 0 V
TJ = 150°C
TJ = 25°C
1
0.1
0.2
0.4 0.6 0.8
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage vs. Current
300
ID = 24 A
200
100
0
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
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