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Número de pieza | NTMFS4936N | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
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No Preview Available ! NTMFS4936N
Power MOSFET
30 V, 79 A, Single N−Channel, SO−8 FL
Features
• Low RDS(on), Low Capacitance and Optimized Gate Charge to
Minimize Conduction, Driver and Switching Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• CPU Power Delivery
• DC−DC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
C(Nuortreen1t)RqJA
TA = 25°C
TA = 100°C
VDSS
VGS
ID
30
±20
19.5
12.3
V
V
A
Power Dissipation
RqJA (Note 1)
Continuous Drain
C(Nuorrteen1t)RqJA ≤ 10 s
TA = 25°C
TA = 25°C
TA = 100°C
PD
ID
2.62 W
35 A
22
Power Dissipation
RqJA ≤ 10 s (Note 1)
Continuous Drain
C(Nuortreen2t)RqJA
Steady
State
TA = 25°C
TA = 25°C
TA = 100°C
PD
ID
8.4 W
11.6 A
7.3
Power Dissipation
RqJA (Note 2)
Continuous Drain
C(Nuortreen1t)RqJC
TA = 25°C
TC = 25°C
TC =100°C
PD
ID
0.92 W
79 A
50
Power Dissipation
RqJC (Note 1)
TC = 25°C
Pulsed DrainCurrent TA = 25°C, tp = 10 ms
Current Limited by Package
TA = 25°C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source DV/DT
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL = 44 Apk, L = 0.1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
PD
IDM
IDmax
TJ,
TSTG
IS
dV/dt
EAS
TL
43 W
235
100
−55 to
+150
39.2
6.0
96.8
A
A
°C
A
V/ns
mJ
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
www.DataSheet4U.com
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
4.0 mW @ 10 V
5.5 mW @ 4.5 V
D (5,6)
ID MAX
79 A
G (4)
S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAM
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
D
SD
S
S
4936N
AYWWG
G GD
D
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NTMFS4936NT1G
Package
SO−8 FL
(Pb−Free)
Shipping†
1500 /
Tape & Reel
NTMFS4936NT3G SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 1
1
Publication Order Number:
NTMFS4936N/D
1 page NTMFS4936N
TYPICAL CHARACTERISTICS
3600
3200
2800
2400
2000
1600
1200
800
400
0
0
Ciss
TJ = 25°C
VGS = 0 V
Coss
Crss
5 10 15 20 25
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
30
1000
100
VDD = 15 V
ID = 15 A
VGS = 10 V
10
td(off)
tf
tr
td(on)
1
1 10 100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
10
9 QT
8
7
6 www.DataSheet4U.com
5
4 QGS QGD
3 TJ = 25°C
2 VDD = 15 V
1 VGS = 10 V
0 ID = 30 A
0 3 6 9 12 15 18 21 24 27 30 33 36 39 42 45
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate−To−Source and
Drain−To−Source Voltage vs. Total Charge
30
VGS = 0 V
25
20
15 TJ = 125°C
10
TJ = 25°C
5
0
0.4 0.5 0.6 0.7 0.8 0.9 1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
1000
100
10 ms
10 100 ms
1 ms
1 VGS = 20 V
SINGLE PULSE
TC = 25°C
0.1 RDS(on) LIMIT
THERMAL LIMIT
0.01 PACKAGE LIMIT
0.1 1
10
10 ms
dc
100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
100
90 ID = 44 A
80
70
60
50
40
30
20
10
0
25 50 75 100 125 150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet NTMFS4936N.PDF ] |
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NTMFS4936N | Power MOSFET ( Transistor ) | ON Semiconductor |
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