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PDF NTMFS4937N Data sheet ( Hoja de datos )
| Número de pieza | NTMFS4937N | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTMFS4937N
Power MOSFET
30 V, 70 A, Single N−Channel, SO−8 FL
Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• CPU Power Delivery
• DC−DC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
C(Nuortreen1t)RqJA
TA = 25°C
TA = 100°C
VDSS
VGS
ID
30
±20
17.1
10.9
V
V
A
Power Dissipation
RqJA (Note 1)
Continuous Drain
C(Nuortreen1t)RqJA ≤ 10 s
TA = 25°C
TA = 25°C
TA = 100°C
PD
ID
2.6 W
30 A
19
Power Dissipation
RqJA ≤ 10 s (Note 1)
Continuous Drain
C(Nuortreen2t)RqJA
Steady
State
TA = 25°C
TA = 25°C
TA = 100°C
PD
ID
8.1 W
10.2 A
6.5
Power Dissipation
RqJA (Note 2)
Continuous Drain
C(Nuortreen1t)RqJC
TA = 25°C
TC = 25°C
TC = 85°C
PD
ID
0.92 W
70 A
44
Power Dissipation
RqJC (Note 1)
Pulsed Drain
Current
TC = 25°C
TA = 25°C, tp = 10 ms
PD
IDM
43 W
210 A
Current Limited by Package
TA = 25°C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source DV/DT
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL = 37 Apk, L = 0.1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
IDmax
TJ,
TSTG
IS
dV/dt
EAS
TL
100
−55 to
+150
40
6.5
68.5
A
°C
A
V/ns
mJ
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
www.DataSheet4U.com
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
4.5 mW @ 10 V
7.0 mW @ 4.5 V
D (5,6)
ID MAX
70 A
G (4)
S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAM
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
D
S
S
S
4937N
AYWWG
D
G GD
D
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NTMFS4937NT1G
Package
SO−8 FL
(Pb−Free)
Shipping†
1500 /
Tape & Reel
NTMFS4937NT3G SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 1
1
Publication Order Number:
NTMFS4937N/D
1 page  
NTMFS4937N
TYPICAL CHARACTERISTICS
2800
2600
2400
2200
2000
1800
1600
1400
1200
1000
800
600
400
200
0
0
Ciss
Coss
VGS = 0 V
TJ = 25°C
Crss
5 10 15 20 25
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
1000
100
VDD = 15 V
ID = 15 A
VGS = 10 V
10
td(off)
tf
tr
td(on)
1
1 10 100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
100
10 ms
10 100 ms
1 VGS = 20 V
Single Pulse
TC = 25°C
0.1 RDS(on) Limit
Thermal Limit
Package Limit
0.01
0.1
1
1 ms
10 ms
dc
10
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
100
11
10
9 TJ = 25°C
8
QT
7 www.DataSheet4U.com
6
5 Qgd
4 Qgs
3
2 VDD = 15 V
1
VGS = 10 V
ID = 30 A
0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
30
VGS = 0 V
25
20
15 TJ = 125°C
10
5
0 TJ = 25°C
0.4 0.5 0.6 0.7 0.8 0.9 1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
70
ID = 37 A
60
50
40
30
20
10
0
25
50
75 100 125 150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
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| PDF Descargar | [ Datasheet NTMFS4937N.PDF ] | |
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