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NTMS4801N fiches techniques PDF

ON Semiconductor - Power MOSFET ( Transistor )

Numéro de référence NTMS4801N
Description Power MOSFET ( Transistor )
Fabricant ON Semiconductor 
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NTMS4801N fiche technique
NTMS4801N
Power MOSFET
30 V, 12 A, NChannel, SO8
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
This is a PbFree Device
Applications
DCDC Converters
Synchronous MOSFET
Printers
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
Current RqJA (Note 1)
Power Dissipation
(Note 1)
RqJA
TA = 25°C
TA = 70°C
TA = 25°C
VDSS
VGS
ID
PD
30
±20
9.9
7.9
1.41
Continuous Drain
Current RqJA (Note 2)
Power Dissipation
(Note 2)
RqJA
Steady
State
TA = 25°C
TA = 70°C
TA = 25°C
ID
PD
7.5
6.0
0.8
Continuous Drain
C(Nuortreen1t)RqJA, t v 10 s
TA = 25°C
TA = 70°C
ID
12
9.6
Power Dissipation
RqJA, t v 10 s(Note 1)
TA = 25°C
Pulsed Drain Current
TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse DraintoSource Avalanche Energy
(TJ = 25°C, VDD = 30 V, VGS = 10 V,
IL = 14 Apk, L = 1.0 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
PD 2.1
IDM 35
TTsJtg,
55 to
150
IS 2.1
EAS 98
TL 260
Unit
V
V
A
W
A
W
A
W
A
°C
A
mJ
°C
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
JunctiontoAmbient – Steady State (Note 1)
RqJA
88.5 °C/W
JunctiontoAmbient – t v 10 s (Note 1)
RqJA
60.5
JunctiontoFoot (Drain)
RqJF
23
JunctiontoAmbient – Steady State (Note 2)
RqJA
156
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1 in sq pad size.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
© Semiconductor Components Industries, LLC, 2009
April, 2009 Rev. 2
1
www.DataSheet4U.com
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
9.0 mW @ 10 V
12.5 mW @ 4.5 V
ID MAX
12 A
NChannel
D
G
S
1
SO8
CASE 751
STYLE 12
MARKING DIAGRAM/
PIN ASSIGNMENT
1
Source
8
Drain
Source
Drain
Source
Drain
Gate
Drain
Top View
4801N = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
NTMS4801NR2G SO8 2500/Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTMS4801N/D

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