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Numéro de référence | NTMS4801N | ||
Description | Power MOSFET ( Transistor ) | ||
Fabricant | ON Semiconductor | ||
Logo | |||
1 Page
NTMS4801N
Power MOSFET
30 V, 12 A, N−Channel, SO−8
Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• This is a Pb−Free Device
Applications
• DC−DC Converters
• Synchronous MOSFET
• Printers
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current RqJA (Note 1)
Power Dissipation
(Note 1)
RqJA
TA = 25°C
TA = 70°C
TA = 25°C
VDSS
VGS
ID
PD
30
±20
9.9
7.9
1.41
Continuous Drain
Current RqJA (Note 2)
Power Dissipation
(Note 2)
RqJA
Steady
State
TA = 25°C
TA = 70°C
TA = 25°C
ID
PD
7.5
6.0
0.8
Continuous Drain
C(Nuortreen1t)RqJA, t v 10 s
TA = 25°C
TA = 70°C
ID
12
9.6
Power Dissipation
RqJA, t v 10 s(Note 1)
TA = 25°C
Pulsed Drain Current
TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche Energy
(TJ = 25°C, VDD = 30 V, VGS = 10 V,
IL = 14 Apk, L = 1.0 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
PD 2.1
IDM 35
TTsJtg,
−55 to
150
IS 2.1
EAS 98
TL 260
Unit
V
V
A
W
A
W
A
W
A
°C
A
mJ
°C
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Ambient – Steady State (Note 1)
RqJA
88.5 °C/W
Junction−to−Ambient – t v 10 s (Note 1)
RqJA
60.5
Junction−to−Foot (Drain)
RqJF
23
Junction−to−Ambient – Steady State (Note 2)
RqJA
156
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1 in sq pad size.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
© Semiconductor Components Industries, LLC, 2009
April, 2009 − Rev. 2
1
www.DataSheet4U.com
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
9.0 mW @ 10 V
12.5 mW @ 4.5 V
ID MAX
12 A
N−Channel
D
G
S
1
SO−8
CASE 751
STYLE 12
MARKING DIAGRAM/
PIN ASSIGNMENT
1
Source
8
Drain
Source
Drain
Source
Drain
Gate
Drain
Top View
4801N = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTMS4801NR2G SO−8 2500/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTMS4801N/D
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Pages | Pages 5 | ||
Télécharger | [ NTMS4801N ] |
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