EM620FV8BT Datasheet PDF - Emerging Memory & Logic Solutions
| Part Number | EM620FV8BT | |
| Description | 256K x8 bit Low Power and Low Voltage Full CMOS Static RAM | |
| Manufacturers | Emerging Memory & Logic Solutions | |
| Logo |  |
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There is a preview and EM620FV8BT download ( pdf file ) link at the bottom of this page. Total 11 Pages | ||
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Document Title
256K x8 bit Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No.
0.0
0.1
0.2
History
Initial Draft
0.1 Revision
0.2 Revision
VIH level change from 2.0V to 2.2V
Fix typo error
EM620FV8BT Series
Low Power, 256Kx8 SRAM
www.DataSheet4U.com
Draft Date
July 16, 2007
Aug. 16, 2007
Nov. 13, 2007
Remark
Emerging Memory & Logic Solutions Inc.
4F Korea Construction Financial Cooperative B/D, 301-1 Yeon-Dong, Jeju-Si, Jeju-Do, Rep.of Korea Zip Code : 690-719
Tel : +82-64-740-1712 Fax : +82-64-740-1749~1750 / Homepage : www.emlsi.com
The attached data sheets are provided by EMLSI reserve the right to change the specifications and products. EMLSI will answer to your
questions about device. If you have any questions, please contact the EMLSI office.
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AC OPERATING CONDITIONS
Test Conditions (Test Load and Test Input/Output Reference)
Input Pulse Level : 0.4 to 2.2V
Input Rise and Fall Time : 5ns
Input and Output reference Voltage : 1.5V
Output Load (See right) : CL1) = 100pF + 1 TTL (70ns)
CL1) = 30pF + 1 TTL (45ns/55ns)
1. Including scope and Jig capacitance
2. R1=3070 ohm, R2=3150 ohm
3. VTM=2.8V
4. CL = 5pF + 1 TTL (measurement with tLZ1,2, tHZ1,2, tOLZ, tOHZ, tWHZ)
EM620FV8BT Series
Low Power, 256Kx8 SRAM
www.DataSheet4U.com
VTM3)
R12)
CL1)
R22)
READ CYCLE (Vcc = 2.7V to 3.6V, Gnd = 0V, TA = -40oC to +85oC)
Parameter
Symbol
45ns
Min Max
55ns
Min Max
Read cycle time
tRC 45 - 55 -
Address access time
tAA - 45 - 55
Chip select to output
tCO1, tCO2
- 45 - 55
Output enable to valid output
tOE - 25 - 25
Chip select to low-Z output
tLZ1, tLZ2
10 - 10 -
Output enable to low-Z output
tOLZ
5-5-
Chip disable to high-Z output
tHZ1, tHZ2
0 20 0 20
Output disable to high-Z output
tOHZ
0 15 0 20
Output hold from address change
tOH 10 - 10 -
70ns
Min Max
70 -
- 70
- 70
- 35
10 -
5-
0 25
0 25
10 -
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
WRITE CYCLE (Vcc = 2.7V to 3.6V, Gnd = 0V, TA = -40oC to +85oC)
Parameter
Symbol
45ns
Min Max
55ns
Min Max
Write cycle time
tWC 45 - 55 -
Chip select to end of write
tCW1, tCW2 45 - 45 -
Address setup time
tAS 0 - 0 -
Address valid to end of write
tAW 45 - 45 -
Write pulse width
tWP 35 - 40 -
Write recovery time
tWR 0 - 0 -
Write to ouput high-Z
tWHZ
0 15 0 20
Data to write time overlap
tDW 25
25
Data hold from write time
tDH 0 - 0 -
End write to output low-Z
tOW 5 - 5 -
70ns
Min Max
70 -
60 -
0-
60 -
50 -
0-
0 20
30
0-
5-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
5
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for EM620FV8BT electronic component. |
| Information | Total 11 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ EM620FV8BT.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | MFRS |
| EM620FV8B | The function is 256K x 8 bit Low Power and Low Voltage Full CMOS Static RAM. Emerging Memory & Logic Solutions | |
| EM620FV8BT | The function is 256K x8 bit Low Power and Low Voltage Full CMOS Static RAM. Emerging Memory & Logic Solutions | |
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