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PDF FSDM0465RS Data sheet ( Hoja de datos )
| Número de pieza | FSDM0465RS | |
| Descripción | Green Mode Fairchild Power Switch | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FSDM0465RS
Green Mode Fairchild Power Switch (FPS™)
Features
! Internal Avalanche Rugged SenseFET
! Advanced Burst-Mode Operation Consumes
under 1W at 240VAC and 0.5W Load
! Precision Fixed Operating Frequency: 66kHz
! Internal Startup Circuit
! Improved Pulse-by-Pulse Current Limiting
! Over-Voltage Protection (OVP)
! Overload Protection (OLP)
! Internal Thermal Shutdown Function (TSD)
! Abnormal Over-Current Protection (AOCP)
! Auto-Restart Mode
! Under-Voltage Lock Out (UVLO) with Hysteresis
! Low Operating Current: 2.5mA
! Built-in Soft-Start
Applications
! SMPS for LCD Monitor and STB
! Adaptor
Description
The FSDM0465RS is an integrated Pulse-Width
Modulator (PWM) and SenseFET specifically designed
for high-performance offline Switch Mode Power
Supplies (SMPS) with minimal external components.
The device is an integrated, high-voltage, power-
switching regulator that combines an avalanche rugged
SenseFET with a current mode PWM control block. The
PWM controller includes integrated fixed-frequency
oscillator, under-voltage lockout, leading-edge blanking
(LEB), optimized gate driver, internal soft-start,
temperature-compensated precise-current sources for a
loop compensation and self-protection circuitry.
Compared with a discrete MOSFET and PWM controller
solution, it reduces total cost, component count, size and
weight; while increasing efficiency, productivity and system
reliability. This device is a basic platform well suited for
cost effective designs of flyback converters.
Ordering Information
Product Number
Package
FSDM0465RSWDTU(1)
Note:
1. WDTU: Forming Type.
TO-220F-6L(Forming)
Eco Status
RoHS
Marking
Code
DM0465RS
BVDSS
650V
RDS(ON)
Max.
2.6Ω
For Fairchild’s definition of “green” Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html.
FPSTM is a trademark of Fairchild Semiconductor Corporation.
© 2008 Fairchild Semiconductor Corporation
FSDM0465RS Rev. 1.0.1
www.fairchildsemi.com
1 page  
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not functionwowr bwe.DopaetarSah- eet4U.com
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. TA = 25°C, unless otherwise specified.
Symbol
Parameter
Value
Unit
BVDSS
VSTR
IDM
ID
EAS
VCC
VFB
PD(Watt H/S)
TJ
TA
TSTG
ESD
Drain Source Breakdown Voltage
VSTR Maximum Voltage
Drain Current Pulsed(6)
Continuous Drain Current(7)
Single Pulsed Avalanche Energy(8)
TC=25°C
TC=25°C
TC=100°C
Supply Voltage
Input Voltage Range
Total Power Dissipation (Tc=25°C)
Operating Junction Temperature
Operating Ambient Temperature
Storage Temperature
ESD Capability, Human Body Model, JESD22-A114
(All pins excepts for VSTR and VFB)
ESD Capability, Charged Device Model,
JESD22-C101
650
650
9.6
2.2
1.4
120
20
-0.3 to 12
45
Internally limited
-25 to +85
-55 to +150
2.0
(GND-VSTR/VFB=1.5kV)
1.0
V
V
ADC
ARMS
ARMS
mJ
V
V
W
°C
°C
°C
kV
kV
Notes:
6. Repetitive rating: pulse width limited by maximum junction temperature.
7. This value is RMS current rating which should not be confused by the switching current.
8. L=14mH, starting TJ=25°C.
Thermal Impedance
TA=25°C, unless otherwise specified.
Symbol
θJA(9)
θJC(10)
Parameter
Junction-to-Ambient Thermal
Junction-to-Case Thermal
Notes:
9. Free standing with no heat-sink under natural convection.
10. Infinite cooling condition - Refer to the SEMI G30-88.
Value
50
2.78
Unit
°C/W
°C/W
© 2008 Fairchild Semiconductor Corporation
FSDM0465RS Rev. 1.0.1
5
www.fairchildsemi.com
5 Page 
Functional Description
1. Startup: In previous generations of Fairchild Power
Switches (FPS™) the VCC pin had an external startup
resistor to the DC input voltage line. In this generation
the startup resistor is replaced by an internal high-
voltage current source. At startup, an internal high-
voltage current source supplies the internal bias and
charges the external capacitor (Cvcc) that is connected to
the VCC pin shown in Figure 17. When VCC reaches 12V,
the FSDM0465RS begins switching and the internal
high-voltage current source is disabled. The
FSDM0465RS continues its normal switching operation
and the power is supplied from the auxiliary transformer
winding unless VCC goes below the stop voltage of 8V.
VCC Vref
Idelay
IFB
VO
Vfb
4
OSC
H11A817A
D1 D2
CB 2.5R
KA431
+
Vfb* R
-
www.DataSheet4U.com
SenseFET
Gate
driver
FSDM0465RS Rev: 00
VSD
OLP
Rsense
Figure 18. Pulse Width Modulation (PWM) Circuit
CVcc
VDC
VCC
3
Vstr
6
8V/12V
VCC good
Istart
Vref
Internal
Bias
FSDM0465RS Rev: 00
Figure 17. Internal Startup Circuit
2. Feedback Control: FSDM0465RS employs current
mode control, as shown in Figure 18. An opto-coupler
(such as the H11A817A) and shunt regulator (such as
the KA431) are typically used to implement the feedback
network. Comparing the feedback voltage with the
voltage across the RSENSE resistor plus an offset voltage
makes it possible to control the switching duty cycle.
When the reference pin voltage of the KA431 exceeds
the internal reference voltage of 2.5V, the H11A817A
LED current increases, thus pulling down the feedback
voltage and reducing the duty cycle. This event typically
happens when the input voltage is increased or the
output load is decreased.
2.1 Pulse-by-Pulse Current Limit: Because current
mode control is employed, the peak current through the
SenseFET is limited by the inverting input of PWM
comparator (VFB*) as shown in Figure 18. Assuming that
the 0.9mA current source flows only through the internal
resistor (2.5R + R = 2.8kΩ), the cathode voltage of diode
D2 is about 2.5V. Since D1 is blocked when the feedback
voltage (VFB) exceeds 2.5V, the maximum voltage of the
cathode of D2 is clamped at this voltage, thus clamping
VFB*. Therefore, the peak value of the current through
the SenseFET is limited.
2.2 Leading-Edge Blanking (LEB): At the instant the
internal SenseFET is turned on, there usually exists a
high-current spike through the SenseFET, caused by
primary-side capacitance and secondary-side rectifier
reverse recovery. Excessive voltage across the RSENSE
resistor would lead to incorrect feedback operation in the
current mode PWM control. To counter this effect, the
FSDM0465RS employs a leading edge blanking (LEB)
circuit. This circuit inhibits the PWM comparator for a
short time (tLEB) after the SenseFET is turned on.
3. Protection Circuit: The FSDM0465RS has several
self protective functions such as overload protection
(OLP), over-voltage protection (OVP) and thermal
shutdown (TSD). Because these protection circuits are
fully integrated into the IC without external components,
the reliability is improved without increasing cost. Once
the fault condition occurs, switching is terminated and
the SenseFET remains off. This causes VCC to fall.
When VCC reaches the UVLO stop voltage, 8V, the
protection is reset and the internal high-voltage current
source charges the VCC capacitor via the Vstr pin. When
VCC reaches the UVLO start voltage, 12V, the
FSDM0465RS resumes its normal operation. In this
manner, the auto-restart can alternately enable and
© 2008 Fairchild Semiconductor Corporation
FSDM0465RS Rev. 1.0.1
11
www.fairchildsemi.com
11 Page | ||
| Páginas | Total 19 Páginas | |
| PDF Descargar | [ Datasheet FSDM0465RS.PDF ] | |
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