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Inchange Semiconductor - Silicon PNP Power Transistor

Numéro de référence BD738
Description Silicon PNP Power Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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BD738 fiche technique
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BD738www.DataSheet4U.com
DESCRIPTION
·DC Current Gain -
: hFE = 40(Min.)@ IC= -20mA
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -45V(Min.)
·Complement to Type BD737
APPLICATIONS
·Designed for amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
i.cnSYMBOL
PARAMETER
VALUE
UNIT
.iscsemVCBO
Collector-Base Voltage
-45 V
wwwVCEO
Collector-Emitter Voltage
-45 V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-4 A
ICM Collector Current-Peak
-7 A
IBB Base Current-Continuous
Collector Power Dissipation
@ Ta=25
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
-1 A
2
W
40
150
Tstg Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn

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