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Numéro de référence | BD736 | ||
Description | Silicon PNP Power Transistor | ||
Fabricant | Inchange Semiconductor | ||
Logo | |||
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BD736www.DataSheet4U.com
DESCRIPTION
·DC Current Gain -
: hFE = 40(Min.)@ IC= -20mA
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -35V(Min.)
·Complement to Type BD735
APPLICATIONS
·Designed for amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
i.cnSYMBOL
PARAMETER
VALUE
UNIT
.iscsemVCBO
Collector-Base Voltage
-35 V
wwwVCEO
Collector-Emitter Voltage
-35 V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-4 A
ICM Collector Current-Peak
-7 A
IBB Base Current-Continuous
Collector Power Dissipation
@ Ta=25℃
PC
Collector Power Dissipation
@ TC=25℃
TJ Junction Temperature
-1 A
2
W
40
150 ℃
Tstg Storage Temperature Range
-55~150
℃
isc Website:www.iscsemi.cn
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Pages | Pages 2 | ||
Télécharger | [ BD736 ] |
No | Description détaillée | Fabricant |
BD733 | Silicon NPN Power Transistor | Inchange Semiconductor |
BD734 | Silicon PNP Power Transistor | Inchange Semiconductor |
BD735 | Silicon NPN Power Transistor | Inchange Semiconductor |
BD736 | Silicon PNP Power Transistor | Inchange Semiconductor |
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