|
|
PDF EPA160A Data sheet ( Hoja de datos )
| Número de pieza | EPA160A | |
| Descripción | High Efficiency Heterojunction Power FET | |
| Fabricantes | Excelics Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de EPA160A (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
|
No Preview Available !
Excelics
EPA160A/EPA160AVwww.DataSheet4U.com
DATA SHEET
High Efficiency Heterojunction Power FET
• +31.0dBm TYPICAL OUTPUT POWER
• 8.5dB TYPICAL POWER GAIN FOR EPA160A AND
10.0dB FOR EPA160AV AT 18GHz
• 0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
• EPA160AV WITH VIA HOLE SOURCE GROUNDING
• Idss SORTED IN 40mA PER BIN RANGE
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS PARAMETERS/TEST CONDITIONS
EPA160A
Chip Thickness: 75 ± 20 microns
All Dimensions In Microns
: Via Hole
No Via Hole For EPA160A
EPA160AV
MIN TYP MAX MIN TYP MAX
Output Power at 1dB Compression f=12GHz 29.0 31.0
P1dB Vds=8V, Ids=50% Idss
f=18GHz
31.0
29.0 31.0
31.0
Gain at 1dB Compression
G1dB Vds=8V, Ids=50% Idss
f=12GHz 9.5 11.5
f=18GHz
8.5
10.0 12.0
10.0
PAE
Gain at 1dB Compression
Vds=8V, Ids=50% Idss
f=12GHz
45
46
Idss Saturated Drain Current Vds=3V, Vgs=0V
290 480 660 290 480 660
Gm Transconductance
Vds=3V, Vgs=0V
320 500
320 500
Vp Pinch-off Voltage
Vds=3V, Ids=4.5mA
-1.0 -2.5
-1.0 -2.5
BVgd Drain Breakdown Voltage Igd=1.6mA
-11 -15
-11 -15
BVgs Source Breakdown Voltage Igs=1.6mA
-7 -14
-7 -14
Rth Thermal Resistance (Au-Sn Eutectic Attach)
MAXIMUM RATINGS AT 25OC
30
22
UNIT
dBm
dB
%
mA
mS
V
V
V
oC/W
SYMBOLS
PARAMETERS
EPA160A
EPA160AV
ABSOLUTE1
CONTINUOUS2
ABSOLUTE1
CONTINUOUS2
Vds Drain-Source Voltage
12V
8V
12V 8V
Vgs Gate-Source Voltage
-8V
-3V
-8V
-3V
Ids Drain Current
Idss
475mA
Idss
625mA
Igsf Forward Gate Current
80mA
14mA
80mA
14mA
Pin Input Power
Tch Channel Temperature
Tstg Storage Temperature
28dBm
175oC
-65/175oC
@ 3dB
Compression
150oC
-65/150oC
28dBm
175oC
-65/175oC
@ 3dB
Compression
150oC
-65/150oC
Pt
Total Power Dissipation
4.5W
3.8W
6.0W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
5.0W
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet EPA160A.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| EPA160A | High Efficiency Heterojunction Power FET | Excelics Semiconductor |
| EPA160AV | High Efficiency Heterojunction Power FET | Excelics Semiconductor |
| EPA160B | High Efficiency Heterojunction Power FET | Excelics Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |