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Numéro de référence | 1N4488 | ||
Description | (1N4460 - 1N4496) SILICON ZENER DIODES | ||
Fabricant | EIC discrete Semiconductors | ||
Logo | |||
1 Page
Certificate TH97/10561QM
Certificate TW00/17276EM
1N4460 - 1N4496 and
1N6485 - 1N6491
VZ : 3.3 - 200 Volts
PD : 1.5 Watts
FEATURES :
* Silicon power zener diodes
* Complete Voltage Range 3.3 to 200 Volts
* High peak reverse power dissipation
* High reliability
* Low leakage current
* Pb / RoHS Free
MECHANICAL DATA :
* Case : M1A Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.20 gram (approximately)
SILICON ZENER DIODES
M1A
0.085(2.16)
0.075(1.91)
0.024(0.60)
0.022(0.55)
1.00 (25.4)
MIN.
0.138(3.51)
0.122(3.10)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS (Rating at 25 °C ambient temperature unless otherwise specified)
Rating
Power Dissipation at Ta = 25 °C
Maximum Forward Voltage at IF = 200 mA
Thermal Resistance , Junction to Lead (Note 1)
Operating Temperature
Storage Temperature Range
Note : (1) At 3/8"(10 mm) lead length form body.
Symbol
PD
VF
RӨJA
TJ
TSTG
Value
1.5
1.0
42
- 65 to + 175
- 65 to + 175
Unit
W
V
°C/W
°C
°C
Page 1 of 2
Fig. 1 POWER TEMPERATURE DERATING CURVE
1.5
1.2
0.9
0.6
L = 3/8" (10 mm)
0.3
0
0 25 50 75 100 125 150 175
Ta, AMBIENT TEMPERATURE (°C)
Rev. 03 : November 2, 2006
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Pages | Pages 2 | ||
Télécharger | [ 1N4488 ] |
No | Description détaillée | Fabricant |
1N448 | Diode ( Rectifier ) | American Microsemiconductor |
1N4480 | 1.5 WTT GLASS ZENER DIODES | Microsemi Corporation |
1N4480 | (1N4460 - 1N4496) SILICON ZENER DIODES | EIC discrete Semiconductors |
1N4480 | 1.5 WATT Voltage Regulators | Semtech |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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