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PDF KSH13007F Data sheet ( Hoja de datos )
| Número de pieza | KSH13007F | |
| Descripción | NPN SILICON TRANSISTOR | |
| Fabricantes | SHANTOU HUASHAN | |
| Logotipo |  |
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Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
KSH13007F
High Speed Switching
Suitable for Switching Regulator and Montor Control
ABSOLUTE MAXIMUM RATINGS Ta=25
Tstg Storage Temperature
Tj Junction Temperature
PC Collector Dissipation Tc=25
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC Collector Current DC
ICP Collector Current Pulse
IB Base Current
65~150
150
40W
700V
400V
9V
8A
16A
4A
Ta=25
Symbol
BVCEO
IEBO
HFE
Characteristics
Collector-Emitter Sustaining Voltage
Emitter-Base Cut-off Current
DC Current Gain
VCE(sat) Collector- Emitter Saturation Voltage
Min Typ
400
10
5
VBE(sat) Base- Emitter Saturation Voltage
Cob Output Capacitance
fT Current Gain-Bandwidth Product
tON Turn On Time
tS Storage Time
tF Fall Time
110
4
Max
1
40
30
1
2
3
1.2
1.6
1.6
3
0.7
TO-220F
1 Base B
2 Collector C
3 Emitter, E
Unit
V
mA
V
V
V
V
V
pF
MHz
s
Test Conditions
IC=10mA, IB=0
VEB=9V, IC=0
VCE=5V, IC=2A
VCE=5V, IC=5A
IC=2A, IB=0.4A
IC=5A, IB=1A
IC=8A, IB=2A
IC=2A, IB=0.4A
IC=5A, IB=1A
VCB=10V, f=0.1MHz
VCE=10V, IC=0.5A
VCC=125V, IC=5A,
s IB1=-IB2=1A
s RL=50
hFE Classification H1 10--16 H2 14--21 H3 19--26 H4 24--31 H5 29--40
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