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PDF KSH13005 Data sheet ( Hoja de datos )
| Número de pieza | KSH13005 | |
| Descripción | NPN SILICON TRANSISTOR | |
| Fabricantes | SHANTOU HUASHAN | |
| Logotipo |  |
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Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
KSH13005
High Speed Switching
Suitable for Switching Regulator and Montor Control
ABSOLUTE MAXIMUM RATINGS Ta=25
Tstg Storage Temperature
Tj Junction Temperature
PC Collector Dissipation Tc=25
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC Collector Current DC
IC Collector Current Pulse
IB Base Current
55~150
150
75W
700V
400V
9V
4A
8A
2A
Ta=25
TO-220
1 Base B
2 Collector C
3 Emitter, E
Symbol
BVCEO
IEBO
Characteristics
Collector-Emitter Sustaining Voltage
Emitter-Base Cut-off Current
Min Typ
400
Max
1
Unit Test Conditions
V IC=10mA, IB=0
mA VEB=9V, IC=0
HFE DC Current Gain
10 40
VCE=5V, IC=1A
VCE(sat) Collector- Emitter Saturation Voltage
VBE(sat) Base- Emitter Saturation Voltage
Cob Output Capacitance
fT Current Gain-Bandwidth Product
8
65
4
40 VCE=5V, IC=2A
0.5 V IC=1A, IB=0.2A
0.6 V IC=2A, IB=0.5A
1 V IC=4A, IB=1A
1.2 V IC=1A, IB=0.2A
1.6 V IC=2A, IB=0.5A
pF VCB=10V, f=0.1MHz
MHz VCE=10V, IC=0.5A
tON Turn On Time
0.8 s VCC=125V,
tS Storage Time
4 s IC=2A,
tF Fall Time
0.9 s IB1=-IB2=0.4A
hFE Classification H1 10--16 H2 14--21 H3 19--26 H4 24--31 H5 29--40
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