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Samsung Semiconductor - 128Kx36 Synchronous SRAM

Numéro de référence KM736V799
Description 128Kx36 Synchronous SRAM
Fabricant Samsung Semiconductor 
Logo Samsung Semiconductor 





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KM736V799 fiche technique
KM736V799
128Kx36 Synchronous SRAM
Document Title
128Kx36-Bit Synchronous Pipelined Burst SRAM
Revision History
Rev. No History
0.0 Initial draft
0.1 Change Undershoot spec
from -3.0V(pulse width20ns) to -2.0V(pulse widthtCYC/2)
Add Overshoot spec 4.6V(pulse widthtCYC/2)
Change VIH max from 5.5V to VDD+0.5V
0.2
0.3
.
Change tCD from 3.2ns to 3.1ns at bin -50.
Change tOE from 3.2ns to 3.1ns at bin -50.
Change setup from 1.5ns to 1.4ns at bin -50.
Change tCYC from 5.5ns to 5.4ns at bin -55.
Change tCD from 3.5ns to 3.1ns at bin -55.
Change tOE from 3.5ns to 3.1ns at bin -55.
Change setup from 1.5ns to 1.4ns at bin -55.
0.4 Add tCYC 175Mhz.
Change ISB2 from 20mA to 30mA.
0.5 Modify DC characteristics( Input Leakage Current test Conditions)
form VDD=VSS to VDD to Max.
1.0 Final Release.
2.0 Add tCYC 225Mhz.
3.0 Add VDDQ Supply voltage( 2.5V )
4.0 Change tCD , tOE from 3.1ns to 2.8ns at bin -44.
Change tHZC max , tHZOE max from 3.0ns to 2.8ns at bin -44.
5.0 Add tCYC 250Mhz.
6.0 Change tAH, tSH, tDH, tWH, tADVH, tCSH from 0.5ns to 0.4ns at bin -40.
7.0 1. Change tAS, tSS, tDS, tWS, tADVS, tCSS from 1.4ns to 1.2ns at bin -44.
2. Change tAH, tSH, tDH, tWH, tADVH, tCSH from 0.5ns to 0.4ns at bin -44.
3. Change tAS, tSS, tDS, tWS, tADVS, tCSS from 1.2ns to 0.8ns at bin -40.
4. Change tAH, tSH, tDH, tWH, tADVH, tCSH from 0.4ns to 0.3ns at bin -40.
8.0 1. Change ISB value from 120mA to 130mA at -57
9.0 Remove 119BGA(7x17 Ball Grid Array Package) .
Draft Date
April . 14. 1998
April . 20. 1998
Remark
Preliminary
Preliminary
May . 23. 1998
Preliminary
May . 25. 1998
Preliminary
May . 30. 1998
Preliminary
June. 08. 1998
Preliminary
June. 15 . 1998
July. 10 . 1998
Dec. 02. 1998
Mar. 04. 1999
Final
Final
Final
Fianl
April. 10. 1999
May. 03. 1999
May. 10. 1999
Final
Final
Final
June. 24. 1999
Nov. 26. 1999
Final
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
- 1 - November 1999
Rev 9.0
www.DataSheet.in

PagesPages 15
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