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Samsung Semiconductor - (KM736V747 / KM718V847) 128Kx36 & 256Kx18 Flow-Through NtRAM

Numéro de référence KM718V847
Description (KM736V747 / KM718V847) 128Kx36 & 256Kx18 Flow-Through NtRAM
Fabricant Samsung Semiconductor 
Logo Samsung Semiconductor 





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KM718V847 fiche technique
KM736V747
KM718V847
128Kx36 & 256Kx18 Flow-Through NtRAMTM
Document Title
128Kx36 & 256Kx18-Bit Flow Through NtRAMTM
Revision History
Rev. No.
History
0.0 1. Initial document.
0.1 1. Changed tCD from 8.0ns to 8.5ns at -8
2. Changed tCYC from 13ns to 12ns at -10
3. Changed DC condition at Icc and parameters
ISB1 ; from 10mA to 30mA,
ISB2 ; from 10mA to 30mA
0.2 Add VDDQ Supply voltage( 2.5V I/O )
0.3 Changed VOL Max value from 0.2V to 0.4V at 2.5V I/O.
1.0 Final spec Release
2.0 Remove VDDQ Supply voltage(2.5V I/O)
3.0 Add VDDQ Supply voltage(2.5V I/O)
4.0 Change tCD value form 8.5ns to 8.0ns at -8
Draft Date
July. 15. 1998
Oct. 10. 1998
Remark
Preliminary
Preliminary
Dec. 10. 1998
Dec. 23. 1998
Jan. 29. 1999
Feb. 25. 1999
May. 13. 1999
July. 16. 1999
Preliminary
Preliminary
Final
Final
Final
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
www.DataSheet.in
- 1 - July 1999
Rev 4.0

PagesPages 17
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