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Datasheet KM736V747-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
KM7 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | KM702 | Sensor Kraft Sensoren
intelligent · konfigurierbar · programmierbar
Serie KM702 / KT702
• Messbereichevon0...200Nbis0...1000N • Zug-oderDruckkraftmessung • WahlweisealsMesszelle(KM702)odermiteingebautem
Verstärker(KT702) • Tarierfunktionstandardmä�  MEGATRON sensor | | |
| 2 | KM7101 | 4.9MHz Rail-to-Rail I/O Amplifier www.fairchildsemi.com
KM7101
Features
I
Ultra-Low Cost, 139µA, +2.7V, 4.9MHz Rail-to-Rail I/O Amplifier
General Description
The KM7101 is an ultra-low cost, low power, voltage feedback amplifier that is pin compatible to the LMC7101. If a standard pinout is required, use the KM4170. The KM7101 us  Fairchild Semiconductor amplifier | | |
| 3 | KM718FV4021 | (KM736FV4021 / KM718FV4021) 128Kx36 & 256Kx18 Synchronous Pipelined SRAM KM736FV4021 KM718FV4021
Document Title
128Kx36 & 256Kx18 Synchronous Pipelined SRAM
128Kx36 & 256Kx18 SRAM
Revision History
Rev. No.
Rev. 0.0 Rev. 0.1
History
- Preliminary specification release - Change specification format. No change was made in parameters. - Updated IDD, ISB and Input High Lev  Samsung semiconductor ram | | |
| 4 | KM718V089 | 512Kx36 & 1Mx18 Synchronous SRAM KM736V989 KM718V089
Document Title
512Kx36 & 1Mx18 Synchronous SRAM
512Kx36 & 1Mx18-Bit Synchronous Pipelined Burst SRAM
Revision History
Rev. No. 0.0 0.1 0.2 History Initial draft 1. Update ICC & ISB values. 1. Change ISB value from 150mA to 110mA at -67. 2. Change ISB value from 130mA to 90mA a Samsung semiconductor ram | | |
| 5 | KM718V847 | (KM736V747 / KM718V847) 128Kx36 & 256Kx18 Flow-Through NtRAM KM736V747 KM718V847
Document Title
128Kx36 & 256Kx18 Flow-Through NtRAMTM
128Kx36 & 256Kx18-Bit Flow Through NtRAMTM
Revision History
Rev. No. 0.0 0.1 History 1. Initial document. 1. Changed tCD from 8.0ns to 8.5ns at -8 2. Changed tCYC from 13ns to 12ns at -10 3. Changed DC condition at Icc and  Samsung Semiconductor data | | |
| 6 | KM718V849 | (KM736V749 / KM718V849) 128Kx36 & 256Kx18 Pipelined NtRAM KM736V749 KM718V849
Document Title
128Kx36 & 256Kx18 Pipelined NtRAMTM
128Kx36 & 256Kx18-Bit Pipelined NtRAM TM
Revision History
Rev. No. 0.0 0.1 History 1. Initial document. 1. Changed tCD,tOE from 4.0ns to 4.2ns at -75 2. Changed DC condition at Icc and parameters ISB1 ; from 10mA to 30mA, ISB2 Samsung Semiconductor data | | |
| 7 | KM718V887 | 256Kx18 Synchronous SRAM KM718V887
Document Title
256Kx18-Bit Synchronous Burst SRAM
256Kx18 Synchronous SRAM
Revision History
Rev. No. 0.0 0.1 History Initial draft Modify power down cycle timing & Interleaved read timing, Insert Note 4 at AC timing characteristics. Change ISB1 value from 10mA to 30mA. Change ISB2 value Samsung semiconductor ram | |
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nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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