|
|
PDF FGH80N60FD2 Data sheet ( Hoja de datos )
| Número de pieza | FGH80N60FD2 | |
| Descripción | 80A Field Stop IGBT | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de FGH80N60FD2 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
|
No Preview Available !
FGH80N60FD2
600V, 80A Field Stop IGBT
Features
• High current capability
• Low saturation voltage: VCE(sat) =1.8V @ IC = 40A
• High input impedance
• Fast switching
• RoHS compliant
Applications
• Induction Heating Application
April 2008
tm
General Description
Using Novel Field Stop IGBT Technology, Fairchild’s new ses-
ries of Field Stop IGBTs offer the optimum performance for
Induction Heating applications where low conduction and
switching losses are essential.
E
C
G
C
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25°C
@ TC = 100°C
@ TC = 25°C
@ TC = 25°C
@ TC = 100°C
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G
E
Ratings
600
± 20
80
40
160
290
116
-55 to +150
-55 to +150
300
Typ.
--
--
Max.
0.43
1.45
40
Units
V
V
A
A
A
W
W
°C
°C
°C
Units
°C/W
°C/W
°C/W
©2008 Fairchild Semiconductor Corporation
FGH80N60FD2 Rev. A1
www.DataSheet.in
1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics (Continued)
Figure 7. Saturation Voltage vs. Vge
20
Common Emitter
TC = 125oC
16
Figure 8. Capacitance Characteristics
5000
4000
Common Emitter
VGE = 0V, f = 1MHz
Ciss TC = 25oC
12
8
40A
4 80A
IC = 20A
0
4 8 12 16
Gate-Emitter Voltage, VGE [V]
20
Figure 9. Gate Charge Characteristics
15
Common Emitter
TC = 25oC
12
Vcc = 100V
9
200V
300V
6
3
0
0 50 100
Gate Charge, Qg [nC]
Figure 11. Turn-Off Switching SOA
Characteristics
200
100
150
3000
2000
Coss
1000
Crss
0
0.1 1 10
Collector-Emitter Voltage, VCE [V]
30
Figure 10. SOA Characteeristics
400
100 10µs
100µs
10
1ms
1
0.1
0.01
1
Single Nonrepetitive
Pulse TC = 25oC
Curves must be derated
linearly with increase
in temperature
10 ms
DC
10 100
Collector-Emitter Voltage, VCE [V]
1000
Figure 12. Turn-On Characteristics vs.
Gate Resistance
200
100
10
Safe Operating Area
1 VGE = 20V, TC = 100oC
1 10
100
Collector-Emitter Voltage, VCE [V]
1000
tr
10
5
0
td(on)
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
TC = 25oC
TC = 125oC
10 20 30 40
Gate Resistance, RG [Ω]
50
FGH80N60FD2 Rev. A1
www.DataSheet.in
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FGH80N60FD2.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| FGH80N60FD | 80A Field Stop IGBT | Fairchild Semiconductor |
| FGH80N60FD2 | 80A Field Stop IGBT | Fairchild Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |