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Número de pieza | FDPF7N50F | |
Descripción | N-Channel MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FDPF7N50F (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! FDP7N50F / FDPF7N50F
N-Channel MOSFET, FRFET
500V, 6A, 1.15Ω
Features
• RDS(on) = 0.95Ω ( Typ.)@ VGS = 10V, ID = 3A
• Low gate charge ( Typ. 15nC)
• Low Crss ( Typ. 6.3pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
November 2007
UniFETTM
tm
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advance technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switching mode power supplies and active power factor
correction.
D
GDS
TO-220
FDP Series
GD S
TO-220F
FDPF Series
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
Parameter
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FDP7N50F FDPF7N50F
500
±30
6 6*
3.6 3.6*
24 24*
270
6
20
4.5
200 38.5
1.59 0.3
-55 to +150
300
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
FDP7N50F
1.4
0.5
62.5
FDPF7N50F
4.0
-
62.5
Units
oC/W
©2007 Fairchild Semiconductor Corporation
FDP7N50F / FDPF7N50F Rev. A
1
www.fairchildsemi.com
www.DataSheet.in
1 page Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP7N50F / FDPF7N50F Rev. A
www.DataSheet.in
5 www.fairchildsemi.com
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet FDPF7N50F.PDF ] |
Número de pieza | Descripción | Fabricantes |
FDPF7N50 | N-Channel MOSFET | Fairchild Semiconductor |
FDPF7N50F | N-Channel MOSFET | Fairchild Semiconductor |
FDPF7N50U | N-Channel MOSFET | Fairchild Semiconductor |
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