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Fairchild Semiconductor - N-Channel PowerTrench MOSFET

Numéro de référence FDP047N10
Description N-Channel PowerTrench MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDP047N10 fiche technique
August 2010
FDP047N10
N-Channel PowerTrench® MOSFET
100V, 164A, 4.7mΩ
Description
• RDS(on) = 3.9mΩ ( Typ.) @ VGS = 10V, ID = 75A
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely low RDS(on)
• High power and current handing capability
• RoHS compliant
General Description
This N-Channel MOSFET is producedusing Fairchild Semicon-
ductor’s advance PowerTrench process that has been especially
tailored to minimize the on-state resistance and yet maintain
superior switching performance.
Application
• DC to DC converters / Synchronous Rectification
D
G
G DS
TO-220
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
VGSS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-
-
-
Parameter
Continuous
Continuous
Continuous
(TC
(TC
(TC
=
=
=
25oC,
100oC,
25oC,
Silicon Limited)
Silicon Limited)
Package Limited)
Ratings
100
±20
164*
116*
120
IDM
EAS
dv/dt
PD
Drain Current
- Pulsed
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
(Note 1)
(Note 2)
(Note 3)
656*
1153
4.5
375
2.5
TJ, TSTG
Operating and Storage Temperature Range
-55 to +175
.TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
.*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
Ratings
0.4
0.5
62.5
Units
V
V
A
A
A
A
mJ
V/ns
W
W/oC
oC
oC
Units
oC/W
©2010 Fairchild Semiconductor Corporation
FDP047N10 Rev. B2
www.DataSheet.in
1
www.fairchildsemi.com

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