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Número de pieza | MBD54DWT1 | |
Descripción | Dual Schottky Barrier Diodes | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
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No Preview Available ! MBD54DWT1
Preferred Device
Dual Schottky Barrier
Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
• Extremely Fast Switching Speed
• Low Forward Voltage − 0.35 V @ IF = 10 mAdc
• Pb−Free Package is Available
http://onsemi.com
30 VOLTS
DUAL HOT−CARRIER
DETECTOR AND SWITCHING
DIODES
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
VR 30 V
PF
150 mW
1.2 mW/°C
Forward Current (DC)
Junction Temperature
Storage Temperature Range
IF
200 Max
mA
TJ
125 Max
°C
Tstg
−55 to +150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
Anode 1
N/C 2
Cathode 3
6 Cathode
5 N/C
4 Anode
MARKING
DIAGRAM
6
SOT−363
CASE 419B−01
1 STYLE 6
BL M
1
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping†
MBD54DWT1
SOT−363 3000/Tape & Reel
MBD54DWT1G SOT−363 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2005
February, 2005 − Rev. 6
www.DataSheet.in
1
Publication Order Number:
MBD54DWT1/D
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet MBD54DWT1.PDF ] |
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