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PDF MBD330DWT1G Data sheet ( Hoja de datos )
| Número de pieza | MBD330DWT1G | |
| Descripción | (MBDxx0DWT1G) Dual Schottky Barrier Diodes | |
| Fabricantes | ON Semiconductor | |
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MBD110DWT1G,
MBD330DWT1G,
MBD770DWT1G
Preferred Device
Dual Schottky Barrier
Diodes
Application circuit designs are moving toward the consolidation of
device count and into smaller packages. The new SOT−363 package is
a solution which simplifies circuit design, reduces device count, and
reduces board space by putting two discrete devices in one small
six−leaded package. The SOT−363 is ideal for low−power surface
mount applications where board space is at a premium, such as
portable products.
Surface Mount Comparisons:
Area (mm2)
Max Package PD (mW)
Device Count
SOT−363
4.6
120
2
SOT−23
7.6
225
1
Space Savings:
Package
SOT−363
1 SOT−23
40%
2 SOT−23
70%
The MBD110DW, MBD330DW, and MBD770DW devices are
spin−offs of our popular MMBD101LT1, MMBD301LT1, and
MMBD701LT1 SOT−23 devices. They are designed for
high−efficiency UHF and VHF detector applications. Readily
available to many other fast switching RF and digital applications.
Features
• Extremely Low Minority Carrier Lifetime
• Very Low Capacitance
• Low Reverse Leakage
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
MBD110DWT1G
MBD330DWT1G
MBD770DWT1G
VR
7.0 V
30
70
Forward Power Dissipation TA = 25°C PF 120 mW
Junction Temperature
TJ −55 to +125 °C
Storage Temperature Range
Tstg −55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
Anode 1
N/C 2
Cathode 3
6 Cathode
5 N/C
4 Anode
1
SC−88 / SOT−363
CASE 419B
STYLE 6
MARKING DIAGRAM
6
xx M G
G
1
xx = Device Code
Refer to Ordering Table,
page 2
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2009
October, 2009 − Rev. 6
www.DataSheet.in
1
Publication Order Number:
MBD110DWT1/D
1 page  
MBD110DWT1G, MBD330DWT1G, MBD770DWT1G
TYPICAL CHARACTERISTICS
MBD770DWT1G
2.0
MBD770DWT1G
1.6
1.2
f = 1.0 MHz
500
MBD770DWT1G
400
KRAKAUER METHOD
300
0.8 200
0.4 100
0
0 5.0 10 15 20 25 30 35 40 45 50
VR, REVERSE VOLTAGE (VOLTS)
Figure 10. Total Capacitance
0
0 10 20 30 40 50 60 70 80 90 100
IF, FORWARD CURRENT (mA)
Figure 11. Minority Carrier Lifetime
10
MBD770DWT1G
1.0 TA = 100°C
TA = 75°C
0.1
0.01 TA = 25°C
0.001
0
10 20 30 40
VR, REVERSE VOLTAGE (VOLTS)
Figure 12. Reverse Leakage
100
MBD770DWT1G
10
TA = 85°C
TA = - 40°C
1.0
TA = 25°C
0.1
50 0.2 0.4 0.8 1.2 1.6
VF, FORWARD VOLTAGE (VOLTS)
Figure 13. Forward Voltage
2.0
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http://onsemi.com
5
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