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Datasheet PDMB600E6-PDF.HTML Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
PDM Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | PDM1102H | MOSFET, Transistor MOSFET 110A 250V
PDM1102H
108.0
P2HM1102H
PDM1102H P2HM1102H
108.0
Approximate Weight :220g 最大定格 Maximum Ratings
Rating
Symbol
Drain-Source Voltage
VDSS
VGS=0V
Gate-Source Voltage Continuous Drain Current
Duty=50% D.C.
VGSS ID
Pulsed Drain Current
IDM
Total Power Dissipation
Nihon Inter Electronics mosfet | | |
2 | PDM1405HA | MOSFET MODULE Dual 140A/500V Nihon Inter Electronics Corporation mosfet | | |
3 | PDM41024 | 1 Megabit Static RAM 128K x 8-Bit
PDM41024
1 Megabit Static RAM 128K x 8-Bit
Features
n
1 2 3 4 5 6 7
Description
The PDM41024 is a high-performance CMOS static RAM organized as 131,072 x 8 bits. Writing is accomplished when the write enable (WE) and the chip enable (CE1) inputs are both LOW and CE2 is HIGH. R Paradigm data | | |
4 | PDM41028 | 1 Megabit Static RAM 256K x 4-Bit
PDM41028
1 Megabit Static RAM 256K x 4-Bit
Features
n
1 2 3 4 5 6 7
Description
The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Rea Paradigm data | | |
5 | PDM41256 | 256K Static RAM 32K x 8-Bit PDM41256
256K Static RAM 32K x 8-Bit
Features
s High-speed access times Com’l: 7, 8, 10, 12, and 15 ns Ind’l: 8, 10, 12, and 15 ns s Low power operation (typical) - PDM41256SA Active: 400 mW Standby: 150 mW - PDM41256LA Active: 350 mW Standby: 25 mW s Single +5V (±10%) power supply s TTL-compat ETC data | | |
6 | PDM44018 | 64K x 18-Bit Fast CMOS SRAM
www.Da Paradigm Technology ram | | |
7 | PDM44026 | 32K x 36-Bit Fast CMOS SRAM
www.Da Paradigm Technology ram | |
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