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PDF PDMB100B12C2 Data sheet ( Hoja de datos )
| Número de pieza | PDMB100B12C2 | |
| Descripción | IGBT MODULE | |
| Fabricantes | Nihon Inter Electronics Corporation | |
| Logotipo |  |
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IGBT MODULE Dual 100A 1200V
CIRCUIT
PDMB100B12C2
OUTLINE DRAWING
4- fasten- tabNo110
Dimension(mm)
MAXMUM RATINGS (Tc=25°C)
Item
Collector-Emitter Voltage
Gate - Emitter Voltage
Collector Current
DC
1 ms
Collector Power Dissipation
Junction Temperature Range
Storage Temperature Range
Isolation Voltage Terminal to Base AC, 1 min.)
Mounting Torque
Module Base to Heat sink
Bus Bar to Main Terminals
ELECTRICAL CHARACTERISTICS (Tc=25°C)
Symbol
VCES
VGES
IC
IC
PC
Tj
Tstg
VISO
FTOR
PDMB100B12C2
1200
+/ - 20
100
200
500
-40 to +150
-40 to +125
2500
2.04
Approximate Weight : 220g
Unit
V
V
A
W
°C
°C
V
N•m
Characteristic
Symbol
Test Condition
Min. Typ. Max. Unit
Collector-Emitter Cut-Off Current
Gate-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Gate-Emitter Threshold Voltage
Input Capacitance
Rise Time
Switching Time
Turn-on Time
Fall Time
Turn-off Time
ICES
IGES
VCE(sat)
VGE(th)
C ies
r
on
f
off
VCE=1200V,VGE=0V
VGE=+/- 20V,VCE=0V
IC=100A,VGE=15V
VCE=5V,IC=100mA
VCE=10V,VGE=0V,f=1MHz
VCC= 600V
RL= 6 ohm
RG=10 ohm
VGE= +/- 15V
-
-
-
4.0
-
- 2.0 mA
- 1.0 µA
1.9 2.4 V
- 8.0 V
8300 - pF
0.25 0.45
0.40
0.25
0.7
0.35
µs
0.80 1.10
FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C)
Item
Symbol
Forward Current
DC
1 ms
IF
IFM
Rated Value
100
200
Unit
A
Characteristic
Symbol
Peak Forward Voltage
VF
Reverse Recovery Time
trr
THERMAL CHARACTERISTICS
Characteristic
Thermal Impedance
IGBT
DIODE
Test Condition
IF=100A,VGE=0V
IF=100A,VGE=-10V,di/dt=200A/µs
Symbol
Test Condition
Rth(j-c) Junction to Case
Min. Typ. Max. Unit
- 1.9 2.4 V
- 0.2 0.3 µs
Min. Typ. Max. Unit
-
-
-
-
0.24
0.42
°C/W
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