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PDF WFF12N65 Data sheet ( Hoja de datos )
| Número de pieza | WFF12N65 | |
| Descripción | Silicon N-Channel MOSFET | |
| Fabricantes | WINSEMI SEMICONDUCTOR | |
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Features
■ 12A,650V,RDS(on)(Max0.8Ω)@VGS=10V
■ Ultra-low Gate Charge(Typical 51.7nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
WFF12N65
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi’s advanced
planar stripe, VDMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. This devices is specially well
suited for AC-DCswitching power supplies, DC-DCpower converters,
high voltage H-bridge motor drive PWM
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
ID
Continuous Drain Current(@Tc=100℃)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ, Tstg
Junction and Storage Temperature
TL Channel Temperature
(Note1)
(Note 2)
(Note 1)
(Note 3)
Value
650
12
±30
990
22
4.5
51
0.41
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/℃
℃
℃
Thermal Characteristics
Symbol
Parameter
RQJC
RQCS
RQJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Value
Min Typ Max
- - 2.45
--
-
- - 62.5
Units
℃/W
℃/W
℃/W
Rev.A Oct.2010
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.
1 page  
www.DataSheet.in
WFF12N65
Fig.10 Gate Test circuit & Waveform
Fig.11 Resistive Switching Test Circuit & Waveform
Fig.12 Uncamped Inductive Switching Test Circuit & Waveform
Steady, all for your advance
5/7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet WFF12N65.PDF ] | |
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