|
|
Número de pieza | WFF12N60 | |
Descripción | Silicon N-Channel MOSFET | |
Fabricantes | WINSEMI SEMICONDUCTOR | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de WFF12N60 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! www.DataSheet.in
WFF12N60
Silicon N-Channel MOSFET
Features
■ 12A, 600V,RDS(on)(Max 0.65Ω)@VGS=10V
■ Ultra-low Gate Charge(Typical 39nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Isolation Voltage ( VISO = 4000V AC )
■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi’s advanced planar
stripe, VDMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. This devices is specially well
suited for high efficiency switch model power supplies, power factor
correction and half bridge and full bridge resonant topology line a
Electronic lamp ballast.
G
D
S TO220F
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
IDM Drain Current Pulsed
VGS
EAS
EAR
dv/dt
Gate to Source Voltage
Single Pulsed Avalanche Energy
2)
Repetitive Avalanche Energy
1)
Peak Diode Recovery dv/dt
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ, Tstg Junction and Storage Temperature
TL Maximum lead Temperature for soldering purposes
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
RQJC
RQCS
RQJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction-to-Ambient
(Note1)
(Note
(Note
(Note 3)
Value
600
12*
7.6*
48*
±30
880
25
4.5
51
0.41
-55~150
300
Value
Min Typ Max
- - 2.45
- 0.5 -
- - 62.5
Rev. C Nov.2008
Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved.
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/℃
℃
℃
Units
℃/W
℃/W
℃/W
T03-1
1 page www.DataSheet.in
WFF12N60
Fig.10 Gate Test Circuit & Waveform
Fig.11 Resistive Switching Test Circuit & Waveform
Fig.12 Unclamped Inductive Switching Test Circuit & Waveform
Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved.
5/7
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet WFF12N60.PDF ] |
Número de pieza | Descripción | Fabricantes |
WFF12N60 | N-Channel MOSFET | Wisdom technologies |
WFF12N60 | Silicon N-Channel MOSFET | WINSEMI SEMICONDUCTOR |
WFF12N65 | Silicon N-Channel MOSFET | WINSEMI SEMICONDUCTOR |
WFF12N65L | Silicon N-Channel MOSFET | Winsemi |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |