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Número de pieza | WFY3N02 | |
Descripción | 20V N-Channel MOSFET | |
Fabricantes | WINSEMI SEMICONDUCTOR | |
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20V N−Channel MOSFET
Features
■ 2.8A, 20V, RDS(on)(Max 65mΩ)@VGS=-4.5V
■ 1.2 V Rated for Low Voltage Gate Drive
■ SOT-23 Surface Mount for Small Footprint
■ Single Pulse Avalanche Energy Rated
General Description
This Power MOSFET is produced using Winsemi’s advanced
MOS technology. This latest technology has been especially
designed to minimize on-state resistance, have a high rugged
avalanche characteristics. This devices is specially well suited for
Load switching and PA switching.
D
G
S
SOT-23
Marking: H04F
Absolute Maximum Ratings(Tc=25℃ unless otherwise noted)
Symbol
Parameter
VDSS
Drain Source Voltage
ID Continuous Drain Current
IDM Drain Current Pulsed
PD
VGS
ESD
TJ, Tstg
TL
Total Power Dissipation(Note 1)
Tc=75℃
Gate to Source Voltage
ESD Capability (Note 3)
C=100pF,RS = 1500Ω
Junction and Storage Temperature
Maximum lead Temperature for soldering purposes
Value
20
2.8
8
0.9
0.6
±8
225
-55~150
260
Units
V
A
A
W
V
V
℃
℃
Maximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are
individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded,
device functional operation is not implied, damage may occur and reliability may be affected.
Thermal Characteristics
Symbol
Parameter
RQJA
RQJA
RQJA
Thermal Resistance, Junction-to-Ambient(Note 1)
Thermal Resistance, Junction-to-Ambient(Note 1)
Thermal Resistance, Junction-to-Ambient(Note 2)
Value
Min Typ Max
- - 170
110
300
Units
℃/W
℃/W
℃/W
Note 1: Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)
Note 2: Surface−mounted on FR4 board using the minimum recommended pad size.
Note 3: ESD Rating Information: HBM Class 0
Rev. A Mar.2010-H04F
Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved.
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1 page WFY3N02
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Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet WFY3N02.PDF ] |
Número de pieza | Descripción | Fabricantes |
WFY3N02 | 20V N-Channel MOSFET | WINSEMI SEMICONDUCTOR |
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