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WSAD92-02 fiches techniques PDF

WINSEMI SEMICONDUCTOR - 200V Ultrafast Dual Diode

Numéro de référence WSAD92-02
Description 200V Ultrafast Dual Diode
Fabricant WINSEMI SEMICONDUCTOR 
Logo WINSEMI SEMICONDUCTOR 





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WSAD92-02 fiche technique
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WSAD92-02
20A,200V Ultrafast Dual Diode
Features
■ Ultrafast recovery time
■ Low forward voltage drop
■ Low leakage current
■ High reliability by planer design
■ Maximum Junction Temperature Range(175)
General Description
Winsemi’s WSAD92-02 is the state of the are Ultra fast recovery
rectifiers specifically designed with optimizedperformance of forward
voltage drop and ultra fast recovery time . The planar structure and
the platinum doped life time, control guarantee the best overall
performance, ruggedness and reliability characteristics.
Applications
Switching Power Supplies
Uninterruptable Power Supplies
Power Switching Circuits
General Purpose
C
A1
C
A2
TO-3P
Absolute Maximum Ratings
Symbol
Parameter
VRRM
IF(AV)
IFSM
TSTG,TJ
Peak Repetitive Reverse Voltage
Average Out Current Square wave, duty=1/2,Tc=115
Repetitive Peak Surge Current
Operating Junction Temperature & Storage Temperature
Value
200
20
100
-55~175
Units
V
A
A
Electrical Characteristics (TC=25unless otherwise noted)
Symbol
Parameter
Test Conditions
VF Forward Voltage Drop
IRRM Reverse Current
trr
Rth(J-C)
Reverse Recovery Time
Thermal Resistance
IF=20A
IF=10A,Tc=125
VR=200V
VR=200V,Tc=150
IF=20A,dIF/dt=100A/µs
Value
Min Typ
Max
- - 1.15
- 0.8
-5
15
--
4
--
30
--
1.5
Units
V
V
µA
mA
ns
/W
Rev, A01 Nov.2008
Copyright@WinSemi Semicond.uctor Co.,Ltd.,All rights reserved.
T02-1

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