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WINSEMI SEMICONDUCTOR - Power Schottky Rectifier

Numéro de référence WSP20D65
Description Power Schottky Rectifier
Fabricant WINSEMI SEMICONDUCTOR 
Logo WINSEMI SEMICONDUCTOR 





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WSP20D65 fiche technique
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WSP20D65
Power Schottky Rectifier
Features
■ 20A(1×10A),65V
■ VF(max)=0.68V(@TJ=125)
■ Low power loss, high efficiency
■ Common cathode structure
■ Guard ring for over voltage protection, High reliability
■ Maximum Junction Temperature Range(175)
General Description
Dual center tap Schottky rectifiers suited for High frequency switch
power supply and Free wheeling diodes, polarity protection applications.
A1
K
A2
TO220
Absolute Maximum Ratings
Symbol
Parameter
VDRM
VDC
IF(RMS)
Repetitive peak reverse voltage
Maximum DC blocking voltage
RMS forward current
IF(AV)
Average forward current
IFSM
PARM
IRRM
dv/dt
TJ,
Tstg
Surge non repetitive forward current
Repetitive peak avalanche power
Repetitive peak reverse current
Critical rate of rise of reverse voltage
Junction Temperature
Storage Temperature
per diode
per device
Value
65
65
30
10
20
150
5800
1
10000
175
-40~150
Units
V
V
A
A
A
W
A
V/ns
Thermal Characteristics
Symbol
Parameter
RQJC
RQCS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Value
Min Typ Max
- - 1.9
0.1 -
-
Units
/W
/W
Rev. C Nov.2008
Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved.
T01-3

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