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PDF WTD8A60 Data sheet ( Hoja de datos )

Número de pieza WTD8A60
Descripción Sensitive Gate Triac
Fabricantes WINSEMI SEMICONDUCTOR 
Logotipo WINSEMI SEMICONDUCTOR Logotipo



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Features
Repetitive Peak off -State Voltage:600V
R.M.S On-State Current(IT(RMS)=8A)
High Commutation dv/dt
Isolation Voltage (VISO=1500V AC)
WTD8A60
Sensitive Gate Triac
General Description
Sensitive gate triggering Triac is suitable for direct couplingto
TTL , CMOS and application such as various logic Functions, low
power AC switching applications,such as fanspeed,small light
controllers and home appliance equipment.
Absolute Maximum Ratings (TJ=25℃ unless otherwise specified)
symbol
Parameter
condition
VDRM
IT(RMS)
Repetitive Peak Off-State Voltage
R.M.S On-State Current
Tc=89
ITSM Surge On-State Current
One Cycle, 50Hz/60Hz,
Peak,Non-Repetitive
I2t I2t
PGM Peak Gate Power Dissipation
PG(AV) Average Gate Power dissipation
IGM Peak Gate Current
VGM Peak Gate Voltage
VISO Isolation Breakdown voltage(R.M.S.) A.C 1 minute
TJ Operating Junction Temperature
TSTG
Storage Temperature
Ratings
600
8.0
80/88
32
5.0
0.5
2.0
10
1500
-40~125
-40~150
Units
V
A
A
A2s
W
W
A
V
V
Thermal Characteristics
Symbol
Parameter
RθJc Thermal Resistance Junction to Case
Value
3.7
Units
/W
Rev.A Aug.2010
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.

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WTD8A60 pdf
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TO-252 Package Dimension
WTD8A60
Unit:mm
Steady, all for your advance
5/5

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