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PDF WTD4A60S Data sheet ( Hoja de datos )
| Número de pieza | WTD4A60S | |
| Descripción | Sensitive Gate Triac | |
| Fabricantes | WINSEMI SEMICONDUCTOR | |
| Logotipo |  |
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Features
� Repetitive Peak off -State Voltage:600V
� R.M.S On-State Current(IT(RMS)=4A)
� Low On-State Voltage (1.6V(Max.)@ITM
� High Commutation dv/dt
� Sensitive Gate Triggering 4 Mode
WTD4A60S
Sensitive Gate Triac
General Description
Sensitive gate triggering Triac is suitable for direct couplingto
TTL , CMOS and application such as various logic Functions, low
power AC switching applications,such as fanspeed,small light
controllers and home appliance equipment.
Absolute Maximum Ratings (TJ=25℃ unless otherwise specified)
symbol
Parameter
condition
VDRM
IT(RMS)
Repetitive Peak Off-State Voltage
R.M.S On-State Current
Tc=109℃
ITSM Surge On-State Current
One Cycle, 50Hz/60Hz,
Peak,Non-Repetitive
I2t I2t
PGM Peak Gate Power Dissipation
PG(AV) Average Gate Power dissipation
IGM Peak Gate Current
VGM Peak Gate Voltage
TJ Operating Junction Temperature
TSTG
Storage Temperature
Ratings
600
4.0
30/33
4.5
1.5
0.1
1.0
7.0
-40~125
-40~150
Units
V
A
A
A2s
W
W
A
V
℃
℃
Thermal Characteristics
Symbol
Parameter
RӨJC
Thermal Resistance Junction to case(DC)
RӨJA
Thermal resistance Junction to Ambient(DC)
Value
2.6
100
Units
℃/W
℃/W
Rev.A Aug.2010
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.
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TO-252 Package Dimension
WTD4A60S
Unit:mm
Steady, all for your advance
5/5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet WTD4A60S.PDF ] | |
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