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WTD1386 fiches techniques PDF

Weitron Technology - PNP EPITAXIAL PLANAR TRANSISTOR

Numéro de référence WTD1386
Description PNP EPITAXIAL PLANAR TRANSISTOR
Fabricant Weitron Technology 
Logo Weitron Technology 





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WTD1386 fiche technique
PNP EPITAXIAL PLANAR TRANSISTOR
P b Lead(Pb)-Free
Features:
* Low VCE(sat) = -0.55(Typ.) (IC/IB=-4A/-0.1A)
* Excellent DC Current Gain Characteristics
Mechanical Data:
* Case : Molded Plastic
* Weight : 0.925 grams
WTD1386
1.BASE
2.COLLECTOR
3.EMITTER
1 23
D-PAK(TO-252)
ABSOLUTE MAXIMUM RATINGS(TA=25ºC)
Rating
Collector to Base Voltage
Symbol
VCBO
Collector to Emitter Voltage
VCEO
Collector to Base Voltage
Collector Current
Total Device Disspation TC = 25°C
Junction Temperature
Storage Temperature
VEBO
IC(DC)
IC(Pulse)
PD
Tj
Tstg
Value
-30
-20
-6
-5
-10
20
+150
-55 to +150
Unit
V
V
V
A
W
˚C
˚C
Device Marking
WTD1386 = 1386
WEITRON
http://www.weitron.com.tw
www.DataSheet.in
1/4
09-Sep-05

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