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Datasheet GTVSB1-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
GTV Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | GTV350MPZI-04 | LCD Module LCD Module User Manual
SPECIFICATIONS
LCD Module User Manual Module No.: GTV350MPZI-04
REV. A
Dalian Good Display Co., Ltd
Tel.: 86-411-84619565 / 84573876 Fax: 86-411-84619585 E-mail: [email protected] Website: http://www.good-lcd.com
Dalian Good Display Co., Ltd.
DOCUMENT REVISION HISTORY
DO  DALIAN GOOD DISPLAY lcd | | |
| 2 | GTV4000 | 2Fh TV receiver APPLICATION NOTE
GTV4000 2Fh TV receiver with TDA9321H and TDA933xH
AN98079
Philips Semiconductors
GTV4000 2Fh TV receiver with TDA9321H and TDA933xH
Application Note AN98079
Abstract
An application of the TDA9321H (High performance Input Processor) and TDA933xH (High performance Output Processor  Philips tv | | |
| 3 | GTVA220701FA | Thermally-Enhanced High Power RF GaN HEMT advance specification
GTVA220701FA
advance specification
Thermally-Enhanced High Power RF GaN HEMT 70 W, 50 V, 1805 – 2170 MHz
Description
The GTVA220701FA is a 70-watt (P3dB) GaN high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It featur  Infineon data | | |
| 4 | GTVA221701FA | Thermally-Enhanced High Power RF GaN HEMT advance specification
GTVA221701FA
advance specification
Thermally-Enhanced High Power RF GaN HEMT 170 W, 50 V, 1805 – 2170 MHz
Description
The GTVA221701FA is a 170-watt (P3dB) GaN high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It feat Infineon data | | |
| 5 | GTVA261701FA | Thermally-Enhanced High Power RF GaN HEMT advance specification
GTVA261701FA
advance specification
Thermally-Enhanced High Power RF GaN HEMT 170 W, 50 V, 2620 – 2690 MHz
Description
The GTVA261701FA is a 170-watt (P3dB) GaN high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It feat Infineon data | | |
| 6 | GTVS05 | FM<-->TV Separator GTVS05
FM<-->TV Separator
Applocation
for Spurious reduction
Characteristics
GTVS05
Zin/Zout Pass Band Insertion Loss 75 ohm Nominal Low 76 up to 108MHz High 175 up to 222MHz Low 3.0dB max (76 up to 108MHz) High 3.0dB max (175 up to 222MHz) Low 10dB min (175 up to 222MHz) Attenuation Low 5dB min  Soshin data | | |
| 7 | GTVSB1 | FM<-->TV Separator GTVSB1
FM<-->TV Separator
Applocation
for Spurious reduction
Characteristics
GTVSB1
Zin/Zout Pass Band Insertion Loss 75 ohm Nominal Low 76 up to 108MHz High 175 up to 222MHz Low 4.0dB max (76 up to 108MHz) High 4.0dB max (175 up to 222MHz) Low 15dB min (0 up to 20MHz) Attenuation Low 12B min (17 Soshin data | |
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